Methods and apparatus for adjusting DC power consumption in mobile handset

ABSTRACT

Apparatus and methods are provided for regulating the power consumption within a wireless communications mobile handset. A base station transmits an RF power output designating signal that indicates a desired level of the RF power output from the mobile handset. The mobile handset receives the RF power output designating signal, where it is used to set the level of the DC power supplied to the mobile handset. In this manner, the minimum amount of power necessary to maintain linear operation of the mobile handset is expended in the mobile handset. The DC power level is set by internally generating a control signal. The level of the control signal is dictated by the desired level of the RF power output as indicated by the received RF power output designating signal. The control signal is then applied to an RF amplifier circuit contained within the mobile handset to set the DC power level. The DC power level can be further varied from the set DC power level in proportion to an envelope of an RF input signal to provide a more power-efficient mobile handset.

RELATED APPLICATIONS

This application is a continuation of application Ser. No. 09/080,773,filed on May 18, 1998, now U.S. Pat. No. 6,008,698.

FIELD OF THE INVENTION

The present inventions are directed to methods and apparatus foroperating a mobile unit more efficiently and linearly over a range ofgiven RF signal output power levels.

In accordance with an aspect of the present inventions, the DC powerconsumed by a wireless communications mobile handset is regulated bytransmitting an RF power output designating signal from a base station,wherein the RF power output designating signal indicates a desired powerlevel of an RF signal output from the mobile handset. The RF poweroutput designating signal is then received by the mobile handset, whereit is used to set the level of the DC power provided to the mobilehandset. Preferably, the level of the DC power is set to the minimumvalue necessary to maintain linear operation of an RF amplifier circuitcontained within the mobile handset. The level of the DC power can beset by generating a control signal within the mobile handset. The levelof the control signal is selected based on the RF power outputdesignating signal. By way of non-limiting example, the control signallevel can be selected from a plurality of control signal levels, whereinthe control signals correspond to a respective plurality of RF poweroutput levels. Thus, the control signal level corresponding to the RFpower output level designated by the RF power output designating signalwill be selected.

In accordance with a further aspect of the present invention, the DCpower level is varied from the set DC power level in proportion to anenvelope of the RF output signal. This can be accomplished by sensingthe envelope of the RF output signal to produce a sampled envelopesignal, which can then be added to the control signal.

In accordance with still a further aspect of the present inventions, afeedback loop, in conjunction with the control signal, can be used toset the level of the DC power. By way of non-limiting example, a supplycurrent tracking signal, which indicates the present level of currentsupplied to an RF amplifier circuit contained in the mobile handset, isgenerated. The difference between the control signal and the supplycurrent tracking signal is determined to obtain a biasing signal. Thesupply current, and thus the DC power supplied to the RF amplifiercircuit, is then varied in proportion to the biasing signal.Alternatively, a supply voltage tracking signal, which indicates thepresent level of voltage supplied to the RF amplifier circuit, isgenerated. The difference between the control signal and the supplyvoltage tracking signal is determined to obtain the biasing signal. Thesupply voltage, and thus the DC power supplied to the RF amplifiercircuit, is then varied in proportion to the biasing signal.

In accordance with still a further aspect of the present inventions, theRF power output designating signal indicates the existence of either ahigh RF output power condition or a low RF output power condition. TheRF input signal is amplified through a driver. During a high RF outputpower condition, the DC power is provided to the RF amplifier circuit,and the RF signal is further amplified through the RF amplifier circuit.During a low RF output power condition, the flow of DC power to the RFamplifier circuit is impeded, and further amplification of the RF inputsignal is bypassed.

To further enhance the linearity and efficiency of the RF amplifiercircuit, various features of the above-mentioned embodiments can becombined.

The present invention pertains to power amplifiers, including morespecifically, a power amplifier circuit for wireless communicationsystems.

BACKGROUND OF THE INVENTION

In wireless communication systems, mobile handsets communicate withother mobile handsets through base stations connected to the PSTN(public switched telephone network). Typically, in FDMA systems the basestations determine the frequencies at which the handsets are tocommunicate and send signals to the handsets to adjust the transmissionpower of the handsets.

The signals that are transmitted by the handsets are typically amplifiedprior to transmission to the base station. The amplification of thesignal within the handset is generally performed by a radio frequency(RF) power amplifier 10, a representative embodiment of which isdepicted in FIG. 1 (PRIOR ART). The RF power amplifier 10 includes a DCpower terminal 12 and ground terminal 14. A DC power source 16 istypically connected between the power terminal 12 and the groundterminal 14, producing a supply voltage, V_(S), at the power terminal 12and a supply current, I_(S), into the power terminal 12. Thus, the RFpower amplifier is supplied with a DC power, P_(DC), equal toV_(S)*I_(S). An RF input signal, RF_(in), generated by the transmittinghandset, is fed into the RF power amplifier 10 via an RF input terminal18. The RF power amplifier 10 amplifies the RF input signal, RF_(in), toproduce an RF output signal, RF_(out), at an RF output terminal 20. TheRF output signal, RF_(out), after passing through signal processingcircuits, is typically sent to the antenna for transmission. An RF inputsignal, RF_(in), has an average input signal power, P_(in), and an RFoutput signal, RF_(out), has an average output signal power, P_(out).

When transmitting a signal with a non-constant envelope from a handsetit is desirable to operate the power amplifier 10 in a linear mode tominimize signal distortion and bandwidth required to transmit thesignal. The linearity of the power amplifier, which is measured by theuniformity of the transfer characteristic (P_(out)/P_(in)), varies withI_(S), V_(S), and RF_(out). Referring to FIG. 2 (PRIOR ART), the curvesC1, C2, and C3 represent compression characteristics of an RF poweramplifier 10 of FIG. 1, given three exemplary amplifier DC power,P_(DC), levels. The line L represents linear operation of the amplifier10. As curves C1, C2, and C3 illustrate, the linearity of the poweramplifier depends on P_(DC). That is, as P_(DC), increases, the range ofP_(in) values for which the amplifier remains linear increases. Ingeneral, the output power, P_(out), for which a power amplifiercompresses increases with the DC power supplied to the power amplifier.

Although supplying a relatively high DC power to the RF power amplifier10 will generally maintain linear operation of the RF power amplifier10, such an arrangement becomes less advantageous in a system withvarying transmission power requirements. A wireless communicationssystem restricts the transmission power of the handset to minimize thesignal from propagating to an excessively far point, so that the samefrequency may be used at a far point, i.e., in other cells in order topermit servicing of as many subscribers as possible within the finitefrequency resources allocated to the system. At the same time, thetransmission power must be high enough to maintain the integrity of thetransmitted signal over the distance that it travels to a base station.The magnitude of the handset transmission power required to maintainproper communication with a base station is dictated in part by thedistance and the electrical communication environment between thehandset and the base station. That is, if the handset is located farfrom a base station, the level of the RF output signal power, P_(out),will be relatively high. If the handset is located close to the basestation, the level of the RF output signal power, P_(out), will berelatively low.

In a situation requiring a relatively low handset transmission power, anRF power amplifier that is supplied with a high DC power is inefficient.Referring to FIG. 1, the power the power amplifier 10 dissipates as heatis equal to the difference between the power supplied to the RFamplifier 10, P_(DC) and P_(in), and the RF output signal power,P_(out), as characterized by the equation,P_(HEAT)=P_(DC)+P_(in)−P_(out). Thus, given a constant DC supply power,P_(DC), the lower the RF output signal power, P_(out), is, the morepower the amplifier wastes as heat. The wasted power in the poweramplifier 10 can be quantified in the power efficiency equation,P_(eff)=P_(out)/(P_(DC)+P_(in)). Thus, the more DC power that issupplied to an RF power amplifier, the less efficient that RF poweramplifier becomes for a constant P_(in) and P_(out).

Therefore, it can be understood that an RF power amplifier that issupplied with a relatively high constant DC power generally operateslinearly over a full range of RF output signal, power levels, but ispower inefficient, thus leading to significantly increased battery andheat sinking requirements, heavier battery weight, and shorter batterylife. On the other hand, a power amplifier that is supplied with arelatively low constant DC power is power efficient, but generallyoperates only linearly over a low range of RF output signal powerlevels, thus resulting in a distorted transmission signal with a largerbandwidth.

There thus remains a need to operate a power amplifier more efficientlyand linearly over a full range of given RF signal output power levels.

SUMMARY OF THE INVENTION

The present inventions solve this problem. The adaptable DC powerconsumption amplifier circuit of the present inventions include acontrol circuit such that an RF amplifier operates more efficiently andlinearly over a full range of given RF signal output power levels.

In a preferred embodiment of the present inventions, there is providedan adaptable supply current circuit that maintains the supply current inan RF amplifier at a desired level. A supply current tracking signalindicative of the present level of the supply current, and a controlsignal indicative of the desired level of the supply current aregenerated. A biasing signal is generated based upon the differencebetween the control signal and the supply current tracking signal. Thebiasing signal is applied to the RF amplifier.

In another preferred embodiment of the present inventions, there isprovided a dynamically adaptable supply current circuit that dynamicallyvaries the supply current in RF amplifier from a desired level. A supplycurrent tracking signal indicative of the present level of the supplycurrent, and a control and envelope tracking signal indicative of thedesired level of the supply current and the present level of a modulatedRF output signal are generated. A dynamic biasing signal is generatedbased upon the difference between the control and envelope trackingsignal and the supply current tracking signal. The dynamic biasingsignal is applied to the RF amplifier.

To further enhance the linearity and efficiency of an RF amplifier,various features of the above-mentioned embodiments can be combined withfeatures of other circuits disclosed in this specification, such as,e.g., an adaptable supply voltage circuit, a dynamically adaptablesupply voltage circuit, or a bypassable circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a prior art circuit diagram of a conventional RF amplifier;

FIG. 2 is a graph showing exemplary compression characteristics of theprior art conventional RF amplifier of FIG. 1;

FIG. 3 is a block diagram of a prior art conventional RF amplifierdepicting a modulated RF input signal amplified to create a modulated RFoutput signal;

FIG. 4 is a block diagram of an adaptable supply current circuit in usewith a single-stage RF amplifier;

FIG. 5 is a block diagram of an alternative adaptable supply currentcircuit in use with a single-stage RF amplifier;

FIG. 6 is a block diagram of an adaptable supply current circuit in usewith an N-stage RF amplifier;

FIG. 7 is a circuit diagram of the adaptable supply current circuit ofFIG. 6;

FIG. 8 is a circuit diagram of a two-stage RF power amplifier for use inthe adaptable supply current circuit of FIG. 7;

FIG. 9 is a circuit diagram of a three-stage RF power amplifier for usein the adaptable supply current circuit of FIG. 7;

FIG. 10 is a graph showing exemplary compression characteristics of theRF amplifier employed in the adaptable supply current circuit of FIG. 7;

FIG. 11 is a block diagram of a dynamically adaptable supply currentcircuit;

FIG. 12 is a block diagram of an alternative embodiment of a dynamicallyadaptable supply current circuit;

FIG. 13 is a circuit diagram of the dynamically adaptable supply currentcircuit of FIG. 11;

FIG. 14 is a circuit diagram of the preferred dynamically adaptablesupply current circuit of FIG. 11;

FIG. 15 is a block diagram of an adaptable supply voltage circuit;

FIG. 16 is a block diagram of an alternative embodiment of an adaptablesupply voltage circuit;

FIG. 17 is a circuit diagram of the adaptable supply voltage circuit ofFIG. 15;

FIG. 18 is a block diagram of a dynamically adaptable supply current andvoltage circuit;

FIG. 19 is a block diagram of a bypassable circuit;

FIG. 20 is a block diagram of an alternative embodiment of a bypassablecircuit;

FIG. 21 is a block diagram of a bypassable dynamically adaptable supplycurrent circuit;

FIG. 22 is a block diagram of a bypassable dynamically adaptable supplyvoltage circuit;

FIG. 23 is a block diagram of a bypassable dynamically adaptable supplycurrent and voltage circuit;

FIG. 24 is a block diagram of an alternative embodiment of a bypassablecircuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 4 depicts an adaptable supply current circuit 50, which can beemployed to operate an RF amplifier 52 contained in the adaptable supplycurrent circuit 50 more efficiently and linearly by controlling a supplycurrent, I_(S), within the RF amplifier 52. The RF amplifier 52 is asingle-stage amplifier, which can be used as one stage of a multi-stageamplifier. The adaptable supply current circuit 50 includes a powersupply 54 having an output terminal 55. An RF input signal, RF_(in), isfed into an RF input terminal 70 of the RF amplifier 52. An amplified RFoutput signal, RF_(out), is output on an RF output terminal 72 of the RFamplifier 52.

The supply current, I_(S), is controlled through a feedback control loop78 comprising a current detector 58, a controller 60, and a signalprocessor 80. The power supply 54 supplies current, I_(S), to the RFamplifier 52 through the current detector 58. The current detector 58includes an input terminal 82 connected to the output terminal 55 of thepower supply 54, and an output terminal 83 connected to the powerterminal 68 of the RF amplifier 52. The current detector 58 furtherincludes a coupling terminal 84 connected to a first input terminal 85of the signal processor 80. The current detector 58 samples a current onthe input terminal 82 of the current detector 58 and supplies the supplycurrent, I_(S), on the output terminal 83 of the current detector 58.The current detector 58 produces a sampled supply current signal,S_(IS), on the coupling terminal 84 of the current detector 58,influencing a supply current tracking signal, S_(TRK-IS), on the firstinput terminal 85 of the signal processor. The supply current trackingsignal, S_(TRK-IS), indicates the present level of the supply current,I_(S). As shown in phantom, the current detector 58 can alternativelysample a supply current, I_(S)′, equal to the sum of the supply current,I_(S), and the RF amplifier gate current (not shown), on a groundterminal 76 of the RF amplifier 52. An example of a device that can beused as the current detector 58 is a current mirror.

Alternatively, as shown in FIG. 5, the feedback control loop 78 includesa current detector 53 with an input terminal 57 connected to the powerterminal 68 of the RF amplifier 52, and an output terminal 59 connectedto the first input terminal 85 of the signal processor 80. The currentdetector 53 samples the supply current, I_(S), on the power terminal 68of the RF amplifier 52 and produces the sampled supply current signal,S_(IS), on the output terminal 59 of the current detector 53,influencing the supply current tracking signal, S_(TRK-IS), on the firstinput terminal 85 of the signal processor. As shown in phantom, thecurrent detector 53 can alternatively sample the supply current, I_(S)′,on the ground terminal 76 of the RF amplifier 52. An example of a devicethat can be used as the current detector 53 is a resistor.

The controller 60 includes an input terminal 63 into which an RF powerdesignating signal, S_(RFOUT), designating a desired average RF outputsignal power, P_(out), and thus, the desired supply current, I_(S), isinput. The controller 60 further includes an output terminal 61 that isconnected to a second input terminal 86 of the signal processor 80. Thecontroller 60 produces a control signal, S_(C), on the output terminal61 of the controller 60 in accordance with the RF power designatingsignal, S_(RFOUT), influencing a control tracking signal, S_(TRK-C), onthe second input terminal 86 of the signal processor 80. The controltracking signal, S_(TRK-C), indicates the desired average level of thesupply current, I_(S).

The signal processor 80 includes a subtractor 62, an amplifier 64, andan integrator 66. The subtractor 62 determines the difference betweenthe control tracking signal, S_(TRK-C), and the supply current trackingsignal, S_(TRK-IS). The amplifier 64 is preferably employed to scale thedifference between the control tracking signal, S_(TRK-C), and thesupply current tracking signal, S_(TRK-IS). The gain of the amplifier 64can be greater or less than unity. The integrator 66 is preferablyemployed to integrate the difference between the control trackingsignal, S_(TRK-C), and the supply current tracking signal, S_(TRK-IS).The signal processor 80 produces a gate biasing signal, S_(G), on anoutput terminal 87 of the signal processor 80. The output terminal 87 ofthe signal processor 80 is connected to a control terminal 74 of the RFamplifier 52. The gate biasing signal, S_(G), is fed into the controlterminal 74 of the RF amplifier 52. The control terminal 74 of the RFamplifier 52 is coupled with the gate of the RF amplifier 52. Thescaling and integration steps are not limited to the particular orderdescribed above, and can be performed in any order or simultaneously toobtain the gate biasing signal, S_(G).

FIG. 6 shows an adaptable supply current circuit 100 with an N-stage RFamplifier 102 having an N number of gain stages (shown in phantom)connected in series. The adaptable supply current circuit 100 is similarto the adaptable supply current circuit 50 shown in FIG. 3, and to theextent the components of each are the same, the same reference numeralshave been used.

The Nth−1 gain stage and the Nth, gain stage are respectively referredto hereinafter as a preceding gain stage 104 and a final gain stage 106.The RF input signal, RF_(in), is fed into an RF input terminal 120 ofthe RF amplifier 102. An amplified RF output signal, RF_(out), is outputon an RF output terminal 122 of the RF amplifier 102.

The power supply 54 supplies a current, I_(SP), to the preceding gainstage 104 through the current detector 58. The input terminal 82 of thecurrent detector 58 is connected to the output terminal 55 of the powersupply 54, and the output terminal 83 of the current detector 58 isconnected to the power terminal 108 of the preceding gain stage 104. Thecurrent detector 58 samples a current on the input terminal 82 of thecurrent detector 58 and supplies the supply current, I_(SP), on theoutput terminal 83 of the current detector 58. The current detector 58produces a sampled supply current signal, S_(ISP), on the couplingterminal 84 of the current detector 58, influencing a supply currenttracking signal, S_(TRK-ISP), on the first input terminal 85 of thesignal processor. The supply current tracking signal, S_(TRK-ISP),indicates the present level of the supply current, I_(SP). The outputterminal 55 of the power supply 54 is connected to the remaining powerterminals of the various gain stages within the RF amplifier 102including the power terminal 108 of the final gain stage 106 providingsupply currents to the gain stages including a supply current, I_(SF),to the final gain stage 106.

The signal processor 80 determines, scales, and integrates thedifference between the control tracking signal, S_(TRK-C), and thesupply current tracking signal, S_(TRK-ISP), to obtain the gate biasingsignal, S_(G), on the output terminal 87 of the signal processor 80. Thegate biasing signal, S_(G), is fed into a control terminal 112 of the RFamplifier 102. The control terminal 112 of the RF amplifier 102 iscoupled with the gate of the preceding gain stage 104 and gate of thefinal gain stage 106. In another embodiment, control terminal 112 of theRF amplifier is solely coupled with the gate of the preceding gain stage104. Preferably, the RF amplifier 102 is characterized with a relativelyconstant gain over a usefully wide range of supply currents. Inaddition, it is desirable that mirroring between the preceding gainstage 104 and the final gain stage 106 remains constant.

In the adaptable supply current circuit 100, the power expended in thecontrol loop 78 is minimized. The sampling occurs in the preceding gainstage 104, which typically operates on a power level and current muchless than that of the final gain stage 106. In another embodiment, thesupply current, I_(SF), in the final gain stage 106 rather than thesupply current, I_(SP), in the preceding gain stage 104 is detected.

Particular aspects of the adaptable supply current circuit 100 will nowbe described with reference to FIGS. 7, 8, and 9. The particular aspectsof the adaptable supply current circuit 100 are arranged and designed tobe used in a handset or Wireless Local Loop (WLL) terminal in a wirelesscommunication system. The components shown in FIGS. 7, 8, and 9 arerepresented using standard electrical symbology. The typical values andmodels of the respective components disclosed herein are based on anamplifier operating frequency of 1880 MHZ. It should be noted that thesevalue and model specifications only aid in the understanding of theinvention and do not in any way limit the invention.

Referring to FIG. 7, the power supply 54 has an output voltage of 5volts on the output terminal 55 and is employed within the adaptablesupply current circuit 100 to bias various components with a DC voltageof either 5 volts or 2.7 volts. Those components that are biased with 5volts are connected directly to the power supply 54, and those that arebiased with 2.7 volts are connected to the power supply 54 through avoltage converter (not shown). A second power supply (not shown) havingan output voltage of −5 volts is also connected within the adaptablesupply current circuit 100 to bias various components with a DC voltageof −5 volts. The particular DC bias voltage values may vary from thosedisclosed herein and will depend on the particular application of thisinvention.

A driver 101 drives the RF amplifier 102. The driver 101 includes apower terminal 124 connected to the power supply 54 through a switch SW1operated by the controller 60. The driver 101 is enabled through acontrol terminal 126 connected to the controller 60 (connection notshown). The driver 101 further includes an RF input terminal 128 thatreceives the RF input signal, RF_(in), from processing circuitry (notshown) external to the adaptable supply current circuit 100. The driver101 amplifies the RF input signal, RF_(in), outputting an intermediateRF signal, RF_(in)′, on the RF output terminal 130 of the driver 101.The particular aspects of the driver 101 are in accordance with typicalknown drivers.

The output terminal 130 of the driver 101 is connected to input terminal120 of the RF amplifier 102, and the intermediate RF signal, RF_(in)′,is applied to the RF input terminal 120 of the RF amplifier 102. The RFamplifier 102 amplifies the intermediate RF signal, RF_(in)′, outputtingthe RF output signal, RF_(out), on the RF output terminal 122 of the RFamplifier 102. The power terminal 108 of the preceding gain stage 104 ofthe RF amplifier 102 is coupled to the power supply 54 through thecurrent detector 58 and switch SW1. The power terminal 110 of the finalgain stage 106 of the RF amplifier 102 is connected to the power supply54 through the switch SW1. The RF amplifier 102 includes a controlterminal 112 that is electrically coupled to the power terminal 108 ofthe preceding gain stage 104 through the feedback control loop 78.

A particular embodiment of the RF amplifier 102, which has two gainstages, i.e., the preceding gain stage 104 and the final gain stage 106,is shown in FIG. 8. The gain stages are preferably embodied in anintegrated chip 132, which in this particular embodiment is a modelPM2105 amplifier chip. The −5 volt DC bias is connected to the RFIN pinof the chip 132 through resistors R1, R2, R3, R4, and R5, and the VGGpin of the chip 132 through resistors R1 and R2, providing a scalingfactor for the biasing of the respective gates 114 and 116 of thepreceding gain stage 104 and final gain stage 106.

A decoupling capacitor Cl is connected between the −5 volt DC bias andground to prevent high frequency signals from entering the second powersupply (not shown). A diode D1 is connected across resistors R2 and R3to scale the current going into the respective power terminals 108 and110 of the preceding gain stage 104 and final gain stage 106. The valuesof resistors R1, R2, R3, R4, and R5 are selected so that the desiredabsolute and relative amount of DC bias voltage is applied to therespective gates 104 and 106 of the preceding gain stage 114 and finalgain stage 116.

The power terminal 108 is connected to the VDD pin of the chip 132,producing the supply current, I_(SP), in the preceding gain stage 104. Alow pass filter 134 is connected between the power terminal 108 and theVDD pin of the chip 132. The low pass filter 134 preferably includes aparallel bank of grounded capacitors C2, C3, and C4 and an inductor L1connected between the capacitors C3 and C4.

The power terminal 110 is connected to the RFOUT1 pin of the chip 132through a low pass filter 136, producing the supply current, I_(SF), inthe final gain stage 106. The low pass filter 136 preferably includes aparallel bank of grounded capacitors C5, C6, C7, and C8 withtransmission line sections TR1, TR2, TR3, and a resistor R6 connectedrespectively between the RFOUT1 pin and C5, C5 and C6, C6 and C7, and C7and C8. A decoupling capacitor C9 is connected between the power supply54 and ground.

The RF input terminal 120 of the RF amplifier 102 is connected to theRFIN terminal of the chip 132 through a coupling capacitor C10 and theresistor R5. The RF output terminal 122 of the RF amplifier 102 isconnected to the RFOUT1 pin of the chip 132 through a matching circuit138 and a DC blocking capacitor C11. The matching circuit 138 includes aparallel bank of grounded capacitors C12, C13, and C14 with atransmission line section TR4 connected between capacitors C13 and C14.

The control terminal 112 of the RF amplifier 102 is connected to theRFIN pin of the chip 132 through a low pass filter 140 and the resistorR5. The control terminal 112 of the RF amplifier 102 is also connectedto the VGG pin of the chip 132 through the resistor R3. The respectivegates 114 and 116 of the preceding gain stage 104 and final gain stage106 are dynamically biased with voltages that are proportional to thegate biasing voltage, V_(G), applied to the control terminal 112 via thecontrol loop 78. The low pass filter 140 rejects the RF input signal,RF_(in), and includes a transmission line section TR5, the resistor R4,and a capacitor C15. A pair of decoupling capacitors C16 and C17 areconnected in parallel between the VGG pin of the chip 132 and ground.The values of the resistors R1, R2, R3, R4, and R5 are selected toprovide the desired absolute and relative amount of variable voltagethat the respective gates 114 and 116 of the preceding gains stage 104and final gain stage 106 are biased with.

The diode D1 in this particular embodiment is a model BAV70 diode.Typical resistance values that may be used for the respective resistorsR1-R5 are e.g., 300Ω, 47Ω, 47Ω, 47Ω, and 3.3Ω. A typical resistancevalue that can be used for resistor R6 is, e.g., 0.1Ω. The followingtypical capacitance values can be used, e.g.,: 0.1 μF for capacitors C1and C9; 33 pF for capacitors C2-C7; 1.5 pF for capacitors C12-C14; 18 pFfor capacitors C15-C17; 1000 pF for capacitor C8; and 27 pF forcapacitor C10; and 6.8 pF for capacitor C11. A typical inductance valueof, e.g., 39nH can be used for the inductor L1. The following typicaltransmission line dimensions in mils, assuming 14 mil Getek material,can be used, e.g.,: 15W and 345L for TR1; 15W and 49L for TR2; 15W and49L for TR3; 27W and 288L for TR4; and 27W and 202L for TR5.

An alternate embodiment of the RF amplifier 102, which has three gainstages, i.e., a first gain stage 103, the preceding gain stage 114, andthe final gain stage 116, is shown in FIG. 9. All three of the gainstages are embodied in a chip 142, which in this particular embodimentis a model CM1335 amplifier chip.

The RF amplifier 102 has an additional power terminal 107 that isconnected to the power supply 54 through the switch SW1. The powerterminal 107 is in turn connected to the VD1 pin of the chip 142 througha low pass filter 144, producing a supply current in the first gainstage 103. The low pass filter 144 includes a parallel bank of groundedcapacitors C18, C19, and C20 with an inductor L2 connected between thecapacitors C19 and C20.

The power terminal 108 is connected to the VD2 pin of the chip 142through a low pass filter 146, producing the biasing current, I_(SP), inthe preceding gain stage 104. The low pass filter 146 prevents highfrequency signals from entering the first power supply 54 and comprisesa parallel bank of grounded capacitors C21 and C22 with an inductor L3connected between the capacitors C21 and C22.

The power terminal 110 is connected to the RFOUT1 pin of the chip 142through a low pass filter 148, producing the biasing current, I_(SF), inthe final gain stage 106. The low pass filter 148 includes a parallelbank of grounded capacitors C23, C24, C25, and C26 with transmissionline sections TR6, TR7, TR8, and a resistor R7 connected respectivelybetween the RFOUT pin and C23, C23 and C24, C24 and C25, and C25 andC26. A decoupling capacitor C27 is connected between the power supply 54and ground.

The RF input terminal 120 of the RF amplifier 102 is connected to theRFIN pin of the chip 142 through a resistor R8. A capacitor C28 isgrounded between the resistor R8 and the RF input terminal 120. The RFoutput terminal 122 of the RF amplifier 102 is connected to the RFOUT1pin of the chip 142 through a matching circuit 150 and a DC blockingcapacitor C29. The matching circuit 150 comprises a parallel bank ofgrounded capacitors C30 and C31 with transmission line sections TR9,TR10, TR11 connected respectively between the RFOUT pin and C30, C30 andC31, and C31 and the blocking capacitor C29.

The control terminal 112 of the RF amplifier 102 is connected to the VG1and VG2 pins of the chip 142 through respective low pass filters 152 and154. The respective gates 114 and 116 of the preceding gain stage 104and final gain stage 106 are dynamically biased with voltages that areproportional to the gate biasing voltage, V_(G), applied to the controlterminal 112 via the control loop 78. The low pass filter 152 preventshigh frequency signals from entering the control loop 78 and comprisesan inductor L4 and a grounded capacitor C32. The low pass filter 154prevents high frequency signals from entering the control loop 78 andcomprises an inductor L5 and a grounded capacitor C33. A resistor R9 isconnected between the control terminal 112 and ground. The value of theresistor R9 is selected to provide the desired amount of dynamic voltagethat the respective gates 114 and 116 of the preceding and final gainstages 104 and 106 are biased with.

Typical resistance values that may be used for the respective resistorsR7-R9 are, e.g., 0.1Ω, 2.2Ω, and 10 kΩ. The following typicalcapacitance values can be used, e.g.,: 33 pF for capacitors C18, C20,and C22; 4700 pF for capacitor C19; 100 pF for capacitor C21; 27 pF forcapacitors C23-C25 and C29; 1000 pF for capacitor C26; 0.1 μF forcapacitor C27; 2.2 pF for capacitor C28; 3.9 pF for capacitor C30; 0.5pF for capacitor C31; and 18 pF for capacitors C32 and C33. A typicalinductance value of, e.g., 47 nH can be used for inductors L2 and L3,and an inductance value of, e.g., 39 nH can be used for inductors L4 andL5. The following typical transmission line dimensions in mils, assuming14 mil Getek material, can be used, e.g.,: 15W and 720L for TR6; 15W and99L for TR7; 15W and 99L for TR8; 36W and 47L for TR9; 17W and 157L forTR10; and 17W and 147L for TR11.

As shown in FIG. 7, the current detector 58 is a current mirror, whichemploys a PNP bipolar transistor Q1 and a diode D2 to sample the supplycurrent, I_(SP), entering the preceding gain stage 104 of the RFamplifier 102. The cathode of the diode D2 is connected to the base ofthe transistor Q1. The anode of the diode D2 is connected to the inputterminal 82 of the current detector 58 through a resistor R10. Thecathode of the diode D2 is connected to the output terminal 83 of thecurrent detector. The emitter of the transistor Q1 is connected to theinput terminal 82 of the current detector 58 through a resistor R11. Thecollector of the transistor Q1 is connected to the coupling terminal 84of the current detector 58 through a resistor R12.

The input terminal 82 of the current detector 58 is connected to theoutput terminal 55 of the power supply 54 through the switch SW1, andthe output terminal 83 of the current detector 58 is connected to thepower terminal 108 of the RF amplifier 102 to provide the supplycurrent, I_(SP), to the preceding gain stage 104 of the RF amplifier102. A diode D3 is connected in parallel with the resistor R10 to limitthe supply current, I_(SP). The value of resistor R10 is selected toprovide the desired maximum amount of supply current, I_(SP).

A sampled supply current, I_(SP)′, substantially proportional to thesupply current, I_(SP), is produced in the resistor R12. A sampledsupply current voltage, V_(ISP), is produced across the resistor R12.The values of resistors R11 and R12 are selected so that the desiredamount of the supply current, I_(SP), is sampled. A decoupling capacitorC34 is connected between the input terminal 82 of the current detector58 and ground.

The diodes D2 and D3 in FIG. 7 are model BAV70 diodes. The bipolartransistor Q1 in this particular embodiment is a model MMBT3640transistor. Typical resistance values of the respective resistorsR10-R12 are, e.g., 47Ω, 47Ω, and 120Ω. A typical capacitance value forthe capacitor C34 is, e.g., 0.1 μF. The current detector 58 is notlimited to the current mirror depicted in FIG. 7, and may include othertypes of current mirrors.

The current detector 58 is connected to a startup circuit 156. Thecoupling terminal 84 is connected to the drain of a JFET transistor Q2.The source of the JFET transistor Q2 is connected to ground. The drainof a JFET transistor Q3 is connected to the drain of the JFET transistorQ2 through a resistor R13. The source of the JFET transistor Q3 isconnected to the 2.7 volt DC bias. The gate of the JFET transistor Q3 isgrounded through a resistor R14. The gate of the JFET transistor Q2 isconnected to the control terminal 126 of the driver 101, and the gate ofthe JFET transistor Q3 is connected to the control terminal 126 of thedriver 101 through a resistor R15. Prior to the enablement of thestartup circuit 156, a relatively large voltage appears between thedrain and the source of the JFET transistor Q2. Subsequent to theenablement of the startup circuit 156 and during the operation of thefeedback control loop 78, a supply current tracking voltage,V_(TRK-ISP), is produced between the drain and the source of the JFETtransistor Q2.

The values of the resistor R13, R14, and R15 are selected to provide thedesired amount of biasing for of the JFET transistors Q2 and Q3 of thestartup circuit 156. The JFET transistors Q2 and Q3 in this particularembodiment are respective model BSS123 and BSS84 transistors. A typicalresistance value for the resistors R13-R16 is, e.g., 10 kΩ.

The controller 60 includes a control processing unit 164 and adigital-to-analog converter 168. The control processing unit 164 iselectrically coupled to the digital-to-analog converter 168 through fourdigital lines 166 to allow selection of an analog control voltage,V_(C), which is produced on the output terminal 61 of the controller 60.The N number of digital lines 166 allows the controller 60 to selectfrom 2^(n) discrete voltage levels, and in this particular embodiment,sixteen discrete voltage levels.

The output terminal 61 of the controller 60 is connected to a voltagebuffer 170. The voltage buffer 170 comprises a resistor R16, a resistorR17, and a capacitor C35 connected in series between the output terminal61 of the controller 60 and ground. A decoupling capacitor C36 isconnected between the output terminal 61 of the controller 60 andground. Alternatively, a 2.7 volt or 5 volt DC bias can be applied tothe voltage buffer 170. Connection of the output terminal 61 of thecontroller 60 to the resistor R16 produces a control tracking voltage,V_(TRK-C), across the resistor R17 and capacitor C35.

The values of the resistors R16 and R17 are selected to produce thedesired scaling factor for the control tracking voltage, V_(TRK-C).Typical resistance values of the respective resistors R16 and R17 are,e.g., 15 kΩ and 100Ω. The typical capacitance values of the respectivecapacitors C35 and C36 are, e.g., 12 pF and 0.1 μF.

The signal processor 80 is an integrating amplifier that embodies thesubtractor 62, amplifier 64, and integrator 66. The signal processor 80includes as its platform a differential operational amplifier U1. Theinverting input terminal of the differential operational amplifier U1 isconnected to an output terminal 176 of the differential operationalamplifier U1 through resistor R20 and a capacitor C39, providingnegative feedback to the differential operational amplifier U1.

The first input terminal 85 of the signal processor 80 is connected tothe inverting input terminal of the differential operational amplifierU1 through resistors R18 and R19. The second input terminal 86 of thesignal processor 80 is connected to the noninverting input terminal ofthe differential operational amplifier U1. The output terminal of theoperational amplifier U1 is connected to the output terminal 176 of thesignal processor 80.

The signal processor 80 further includes positive and negative powerterminals 172 and 174 that are respectively connected to the positiveand negative power terminals of the differential operational amplifierU1. The positive power terminal 172 of the signal processor 80 isconnected to the 5 volt DC bias. Alternatively, the positive powerterminal 172 of the signal processor 158 can be connected to the 2.7volt DC bias. The negative power terminal 174 of the signal processor158 is connected to the −5 volt DC bias. Decoupling capacitors C37 andC38 are respectively connected between the 5 volt DC bias and ground,and the −5 volt DC bias and ground.

The coupling terminal 84 of the current detector 80 is connected to thefirst input terminal 85 of the signal processor 80 outputting the supplycurrent tracking voltage, V_(TRK-ISP), on the first input terminal 85 ofthe signal processor 80. The voltage buffer 170 is connected to thesecond input terminal 86 of the signal processor 80 outputting thecontrol tracking voltage, V_(TRK-C), on the second input terminal 86 ofthe signal processor 80. The second input terminal 86 of the signalprocessor 80 is connected between the resistors R16 and R17 of thevoltage buffer 170. The signal processor 80 produces a gate biasingvoltage, V_(G), on the output terminal 176 of the signal processor 80equal to the integrated and scaled difference between the controltracking voltage, V_(TRK-C), and the supply current tracking voltage,V_(TRK-ISP). The value of the capacitor C35 is selected to vary thecompensation and response time of the feedback control loop 78.

The differential operational amplifier U1 in this particular embodimentis a model LM7121 operational amplifier. The values of the resistorsR18-R20 and capacitor C39 are selected to provide the desired gain andintegration for the signal processor 80. Typical resistance values forthe respective resistors R18-R20 are, e.g., 100Ω, 3KΩ, and 100Ω. Typicalcapacitance values for the respective capacitors C37-C39 are, e.g., 0.1μF, 0.1 μF, and 32 pF.

The output terminal 176 of the signal processor 80 is connected to thecontrol terminal 112 of the RF amplifier 102 through a low pass filter178. The low pass filter 178 includes a pair of series connectedresistors R21 and R22 with a grounded capacitor C40 connected betweenthe resistors R21 and R22. A diode D4 is connected in parallel with theoutput terminal 176 to prevent the respective gates 114 and 116 of thepreceding gain stage 104 and the final gain stage 106 from becoming morepositively biased than the voltage drop across the diode D4. The gatebiasing voltage, V_(G), is outputted to the control terminal 112 of theRF amplifier 102 through the low pass filter 178.

The diode D4 in this particular embodiment is a model MA4C5103C diode. Atypical resistance value of the resistors R21 and R22 is, e.g., 10Ω. Atypical resistance value of the capacitor C40 is, e.g., 18 pF.

The following is a description of the operation of the adaptable supplycurrent circuit 100. The handset or WLL terminal receives the RF powerdesignating signal, S_(RFOUT), designating the power level of the RFoutput signal, RF_(out). Prior to closure of the switch SW1, no currentis flowing through the startup circuit 156, and thus, a relatively highvoltage appears between the drain and source of the JFET transistor Q2,which is applied to the first input terminal 85 of the signal processor80. A relatively low voltage appears across the output of the voltagebuffer 170, which is applied to the second input terminal 86 of thesignal processor 80. As such, a high negative voltage appears on theoutput terminal 176 of the signal processor 80, maintaining the RFamplifier 102 in an off position.

When the handset is ready to transmit to the base station, thecontroller 60 enables the switch SW1, providing power to the driver 101through the power terminal 124 and to the preceding gain stage 104 andfinal gain stage 106 of the RF amplifier 102 through the respectivepower terminals 108 and 110. The controller 60 also enables the driver101 through the control terminal 126. Since the startup circuit 156 isconnected to the control terminal 126, the gates of the JFET transistorsQ2 and Q3 are biased, allowing current to flow through the startupcircuit 156. The control terminal 126 of the driver 101 is preferablyenabled approximately 200 ns after the switch SW1 is closed.

The voltage between the drain and the source of the JFET transistor Q2is reduced. The voltage on the first input terminal 85 of the signalprocessor 80 decreases, creating a relatively low negative voltage onthe output terminal 176 of the signal processor 80. The RF amplifier 102is turned on to produce the supply currents, I_(SP) and I_(SF), in therespective preceding and final gain stages 104 and 106.

The supply current, I_(SP), flows through the diode D2 of the currentdetector 58. The sampled supply current, I_(SP)′, flows through thebipolar transistor Q1, producing the sampled supply current voltage,V_(ISP), across the resistor R12. The bias current, I_(SP), influencesthe supply current tracking voltage, V_(TRK-ISP), between the drain andsource of the JFET transistor Q2. The supply current tracking voltage,V_(TRK-ISP), inversely varies with the supply current, I_(SP). That is,as the supply current, I_(SP), increases, the sampled supply current,I_(SP)′, increases, increasing the sampled supply current voltage,V_(ISP), across the resistor R12. An increase in the sampled supplycurrent voltage, V_(ISP), correspondingly decreases the supply currenttracking voltage, V_(TRK-ISP), between the drain and source of the JFETtransistor Q2. Likewise, a decrease in the supply current, I_(SP),correspondingly decreases the supply current tracking voltage,V_(TRK-ISP). The supply current tracking voltage, V_(TRK-ISP), indicatesthe present level of the supply current, I_(SP).

The control processing unit 164 of the controller 60 receives the RFpower designating signal, S_(RFOUT), from the input terminal 63 of thecontroller 60, and accordingly sends a digital signal through thecontrol lines 166 to the digital-to-analog converter 168 selecting thecontrol voltage, V_(C). The digital-to-analog converter 168 produces thecontrol voltage, V_(C), on the output terminal 61 of the controller 60.The control voltage, V_(C), is applied to the voltage buffer 170 toinfluence the control tracking voltage, V_(TRK-C), across the resistorR17 and capacitor C35. The control tracking voltage, V_(TRK-C), varieswith the control voltage, V_(C). That is, as the control voltage, V_(C),increases, the control tracking voltage, V_(TRK-C), increases. Likewise,as the control voltage, V_(C), decreases, the control tracking voltage,V_(TRK-C), decreases. The control tracking voltage, V_(TRK-C), indicatesthe desired level of the supply current, I_(SF).

The supply current tracking voltage, V_(TRK-ISP), is applied to thefirst input terminal 85 of the signal processor 80. The control trackingvoltage, V_(TRK-C), is applied to the second input terminal 86 of thesignal processor 80. The signal processor 80 determines, scales, andintegrates the difference between the control tracking voltage,V_(TRK-C), and the supply current tracking voltage, V_(TRK-ISP), toproduce the gate biasing voltage, V_(G), on the output terminal 176 ofthe signal processor 80.

The gate biasing voltage, V_(G), is then fed through the low pass filter178 into the control terminal 112 of the RF amplifier 102, which variesthe supply current, I_(SP), and thus the supply current, I_(SF),according to the control voltage, V_(C), selected by the controller 60.

The RF input signal, RF_(in), is fed into the RF input terminal 128 ofthe driver 101, which amplifies the RF input signal, RF_(in), to producethe intermediate RF signal, RF_(in)′, on the output terminal 130 of thedriver 101. The intermediate RF signal, RF_(in)′, is fed into the RFinput terminal 120 of the RF amplifier 102, which amplifies theintermediate RF signal, RF_(in)′, to produce the RF output signal,RF_(out), on the RF output terminal 122 of the RF amplifier 102. The RFinput signal, RF_(in), is preferably applied to the RF input terminal128 of the driver 101 preferably approximately 400 ns after the closureof the switch SW1.

The levels of the supply currents, I_(SP) and I_(SF), are chosen suchthat it has the minimum value necessary to maintain the RF amplifier 102in a linear operating range across the full range of average RF outputsignal power, P_(out). As depicted in FIG. 10, the controller 60 isprogrammed with a matrix of average RF output signal power, P_(out),levels P₁-P₁₆ and corresponding control voltage, V_(C), levelsV_(C1)-V_(C16). As can be seen from FIG. 10., each voltage, V_(C),levels is chosen such it is the minimum necessary to maintain linearoperation of the RF output amplifier 102 on that particular average RFoutput signal power, P_(out), level. It should be noted that because thecontroller 60 can select from sixteen discrete control voltage, V_(C),levels, the range of average RF output signal power, P_(out), levels isdivided into sixteen corresponding levels. The level of the controlvoltage, V_(C), corresponding to the particular level of the average RFoutput signal, P_(out), should be chosen, such that the levels of thesupply currents, I_(SP) and I_(SF), are the minimum necessary tomaintain linear operation of the RF amplifier on that particular levelof average RF output signal power, P_(out).

When the controller 60 receives the RF power designating signal,S_(RFOUT), designating the desired level of average RF output signalpower, P_(out), the controller 60 will select the corresponding level ofcontrol voltage, V_(C), from the matrix and set the values of the supplycurrents, I_(SP) and I_(SF), to the minimum level necessary to maintainlinear operation of the RF amplifier 102. For instance, if the level ofthe average RF output signal power, P_(out), is P₅, the controller 60will receive the RF power designating signal, S_(RFOUT), designating thelevel P₅ as the desired average RF output signal power, P_(out). Thecontroller 60 will accordingly select V_(C5) as the level of the controlvoltage, V_(C), which is the minimum level of the control voltage,V_(C), necessary to maintain linear operation of the RF amplifier 102 onan average RF output signal power, P_(out), level of P₅. If thecontroller 60 receives the RF power designating signal, S_(RFOUT), sentfrom the base station designating an increase in the average RF outputsignal power, P_(out), from the level P₅ to the level P₆, the controller60 will accordingly select V_(C6) as the level of the control voltage,V_(C), which is the minimum level of the control voltage, V_(C),necessary to maintain linear operation of the RF amplifier 102 on anaverage RF output signal power, P_(out), level of P₅. Likewise, if thecontroller 60 receives the RF power designating signal, S_(RFOUT),designating a decrease in the average RF output signal power, P_(out),from the level P₅ to the level P₄, the controller 60 will accordinglyselect V_(C4) as the level of the control voltage, V_(C), which is theminimum level of the control voltage, V_(C), necessary to maintainlinear operation of the RF amplifier 102 on an average RF output signalpower, P_(out), level of P₄.

FIG. 11 shows a dynamically adaptable supply current circuit 200. Thedynamically adaptable supply current circuit 200 is similar to theadaptable supply current circuit 100 shown in FIG. 6, and to the extentthe components of each are the same, the same reference numerals havebeen used. The dynamically adaptable supply current circuit 200 differsfrom the adaptable supply current circuit 100 in that the bias current,I_(SP), varies with the envelope of a modulated RF output signal,RF_(out), from the level set by the controller 60, increasing theefficiency of the RF amplifier 102.

The RF amplifier 102 as depicted in FIG. 11 has N gain stages. Asingle-stage RF amplifier, however, can be employed in this arrangementwithout straying from the principles taught by this invention. The RFinput signal, RF_(in), fed into the RF input terminal 120 of the RFamplifier 102 is amplified to produce an intermediate RF output signal,RF_(out)′, on the RF output terminal 122 of the RF amplifier 102, whichis a modulated signal having an output envelope signal, S_(env), asdepicted in FIG. 3.

The control feedback loop 78 of the dynamically adaptable supply currentcircuit 200 includes a signal detector 202 to sample the output envelopesignal, S_(env). The signal detector 202 includes an input terminal 204connected to the RF output terminal 122 of the RF amplifier 102. Thesignal detector 202 samples the output envelope signal, S_(env), fromthe intermediate RF output signal, RF_(out)′ on the output terminal 122of the RF amplifier 122 and produces the RF output signal, RF_(out), onan output terminal 206 of the signal detector 202. The signal detector202 includes a coupling terminal 208 connected to the second inputterminal 86 of the signal processor 80. The signal detector 202 producesa sampled output envelope signal, S_(env),′ on the coupling terminal 208of the signal detector 202, influencing a control and envelope trackingsignal, S_(TRK-C-env), on the second input terminal 86 of the signalprocessor 80. The control and envelope tracking signal, S_(TRK-C-env),indicates the present level of the output envelope signal, S_(env), aswell as the desired average level of the supply current, I_(SF). Anexample of a device that can be used as the signal detector 202 is adirectional coupler and peak detector.

Alternatively, as shown in. FIG. 12, the feedback control loop 78includes a signal detector 210 with an input terminal 212 that isconnected to the RF output terminal 122 of RF amplifier 102, and anoutput terminal 59 that is connected to the second input terminal 86 ofthe signal processor 80. The RF output signal, RF_(out), having anoutput envelope signal, S_(env), is produced on the RF output terminal122 of the RF amplifier 102. The signal detector 210 samples the outputenvelope signal, S_(env), on the input terminal 212 of the signaldetector 210 and produces the sampled output envelope signal, S_(env),on the output terminal 214 of the signal detector 210, influencing thecontrol and envelope tracking signal, S_(TRK-C-env), on the second inputterminal 86 of the signal processor 80. An example of a device that canbe used as the signal detector 210 is a peak detector.

The signal processor 80 determines, scales, and integrates thedifference between the control and envelope tracking signal,S_(TRK-C-env), and the supply current tracking signal, to obtain adynamic gate biasing signal, S_(DG), on the output terminal 112 of thesignal processor 80. The dynamic gate biasing signal, S_(DG), is fedinto a control terminal 112 of the RF amplifier 102.

The control loop 78 allows the average supply current, I_(SF), to be setby the controller 60, while allowing the supply current, I_(SF), to alsovary with the level of the output envelope signal, S_(env).

In alternative embodiments, a dynamically adaptable supply currentcircuit is created by foregoing the employment of the controller 60. Inthis embodiment, the signal detector 202 is employed to produce anenvelope tracking signal, S_(TRK-env), which indicates the present levelof the output envelope signal, S_(env), on the second input terminal 86of the signal processor 80. A dynamic gate biasing signal, S_(DG), isproduced on the output terminal 112 of the signal processor 80, andapplied to the control terminal 112 of the RF amplifier 102, allowingthe average supply current, I_(SF), to vary with the output envelopesignal, S_(env).

Particular aspects of the dynamically adaptable supply current circuit200 will now be described with reference to FIG. 13. To the extent theparticular aspects of the dynamically adaptable supply current circuit200 are the same to those of the adaptable supply current circuit 100,the same reference numerals have been used.

The particular signal detector 202 in this embodiment is a peak orenvelope detector. The envelope detector 202 includes a directionalcoupler 216. The input port and output port of the directional coupler216 are respectively connected to the input terminal 204 and the outputterminal 206 of the envelope detector 202. The RF output signal,RF_(out)′, on the output terminal 122 of the RF amplifier 102 has anoutput envelope voltage, V_(env). The coupling port of the directionalcoupler 216 is connected to ground through a load resistor R23,producing a sampled signal, RF_(out)″, at the resistor R23.

The anode of a DC biased diode D5 is connected to ground through theload resistor R23 and a DC blocking capacitor C41, and the cathode ofthe diode D5 is connected to ground through an RC circuit comprising aresistor R24 connected in parallel with a capacitor C42. The 2.7 volt DCbias is applied to a power terminal 203 of the envelope detector 202.The power terminal 203 of the envelope detector 202 is connected to theanode of the diode D5 through a resistor R25. A sampled output envelopevoltage, V_(env)′, proportional to the output envelope voltage, V_(env),is produced across the RC circuit, R24 and C42. The values of theresistor R24 and C42 are selected to vary the time constant of the RCcircuit.

The cathode of the diode D5 is connected to the coupling terminal 208 ofthe envelope detector 202. The coupling terminal 208 of the envelopedetector 202 is connected to ground through a resistor R26 and theresistor R17 and capacitor C35 of the voltage buffer 170. A control andenvelope tracking voltage, V_(TRK-C-env), is produced across theresistor R17 and capacitor C35 of the voltage buffer 170, and thus thesecond input terminal 86 of the signal processor 80. This signal is asummation of V_(C) and V_(env)′.

The directional coupler 216 in this particular embodiment is a model550PBM directional coupler. The diode D5 in this particular embodimentis a model MA4E1245KA diode. Typical resistance values that may be usedfor the respective resistors R23-R26 are, e.g., 220Ω, 10 kΩ, 270 kΩ, and10 kΩ. A typical capacitance value that may be used for the respectivecapacitors C41 and C42 are, e.g., 27 pF and 2 pF.

As shown in FIG. 14, the envelope detector 202 can alternativelycomprise a temperature compensation circuit 220. The temperaturecompensation circuit 220 includes a DC biased diode D6 that is connectedon its anode to a power terminal 222 of the envelope detector 202through a resistor R27. The power terminal 222 of the envelope detector202 is connected to the 2.7 volt DC bias. The cathode of the diode D6 isconnected to ground through a resistor R28, producing a temperaturecompensating voltage, V_(TMP), across the resistor R28. Preferably, theresistance values R25 and R24 are respectively equal to the resistancevalues of R27 and R28 and the characteristics of the diodes D5 and D6are similar, so that the temperature compensating voltage, V_(TMP), andthe sampled output envelope voltage, V_(env)′ vary the same overtemperature.

The cathode of the diode D6 is connected to an inverting input terminalof a differential operational amplifier U2 through a resistor R29. Theresistor R26 is connected to the noninverting input terminal ofdifferential operational amplifier U2. The inverting input terminal ofthe differential operational amplifier U2 is connected to the outputterminal of the differential operational amplifier U2 through anelectrical path comprising a resistor R30.

The positive power terminal of the differential operational amplifier U2is connected to the 5 volt DC bias. Alternatively, the positive powerterminal can be connected to the 2.7 volt DC bias. The negative powerterminal of the differential operational amplifier U2 is connected tothe −5 volt DC bias. Decoupling capacitors C43 and C44 are respectivelyconnected between the 5 volt DC bias and ground, and the −5 volt DC biasand ground.

A temperature compensated output envelope voltage, V_(env)″,proportional to the output envelope voltage, V_(env), and stable over arange of temperatures, is produced on the output terminal of thedifferential operational amplifier U2. The resistance values of R26 andR29 are equal to provide accurate temperature compensation of thesampled output envelope voltage, V_(env)′. The output terminal of thedifferential operational amplifier U2 is connected to the couplingterminal 208 of the envelope detector 202. The coupling terminal 208 ofthe envelope detector 202 is grounded through a feed resistor R31, andthe resistor R17 and capacitor C35 of the voltage buffer 170. Thecontrol and envelope tracking voltage, V_(TRK-C-env), is produced acrossthe resistor R17 and capacitor C35 of the voltage buffer 170, and thusthe second input terminal 86 of the signal processor 80. This signal isthe summation of V_(env)″ and V_(C).

The signal processor 80 produces a dynamic gate biasing voltage, V_(DG),on the output terminal 176 of the signal processor 80 equal to thescaled and integrated difference between the control and envelopetracking voltage, V_(TRK-C-env), and the supply current trackingvoltage, V_(TRK-ISP).

The diode D6 in this particular embodiment is a model NA4E1245KA diode.The differential operational amplifier U2 in this particular embodimentis a model LM7121 operational amplifier. Typical resistance values thatmay be used for the respective resistors R27-31 are, e.g., 270 kΩ, 10kΩ, 10 kΩ, 10 kΩ, and 3.9 kΩ. A typical capacitance value that may beused for the respective capacitors C43 and C44 is, e.g., 0.1 μF.

The following description of the operation of the dynamically adaptablesupply current circuit 200 is provided. To the extent that the operativeaspects of the dynamically adaptable supply current circuit 200 aresimilar to those of the adaptable supply current circuit 100 describedabove, they will not be repeated.

After the supply currents, I_(SP) and I_(SF), have reached their desiredset levels, and the modulated output signal, RF_(out), has reached theRF output terminal 122 of the RF amplifier 102, the envelope detector202 samples the intermediate RF output signal, RF_(out)′, and producesthe sampled output signal, RF_(out)″, across the resistor R23. Theenvelope detector 202 produces the RF output signal, RF_(out), on the RFoutput terminal 122 of the envelope detector 202. The diode D5 and RCcircuit detect the envelope voltage of the sampled output signal,RF_(out)″, and produce the sampled output envelope voltage, V_(env)′,across the resistor R24.

If the temperature compensating circuit 210 is employed, thedifferential amplifier U2 determines the difference between thetemperature compensating voltage, V_(TMP), and the sampled outputenvelope voltage, V_(env)′. The temperature compensating voltage,V_(TMP), varies the same amount with temperature as does the sampledoutput envelope voltage, V_(env)′, and the temperature createdvariations in the sampled output envelope voltage, V_(env)′, areeffectively removed by the differential amplifier U2 to produce thetemperature compensated sampled output envelope voltage, V_(env)″.

Depending on whether the temperature compensating circuit 210 isemployed, either the sampled output envelope voltage, V_(env)′, or thetemperature compensated sampled output envelope voltage, V_(env)″, isapplied to the voltage buffer 170, influencing the control and envelopetracking voltage, V_(TRK-C-env), across the resistor R17 and capacitorC35. The control and envelope tracking voltage, V_(TRK-C-env), varieswith the output envelope voltage, V_(env). That is, as the outputenvelope voltage, V_(env), increases, the control and envelope trackingvoltage, V_(TRK-C-env), increases. Likewise, as the output envelopevoltage, V_(env), decreases, the control and envelope tracking voltage,V_(TRK-C-env), decreases. The control and envelope tracking voltage,V_(TRK-C-env), indicates the present level of the output envelopevoltage, V_(env), as well as the desired average level of the supplycurrent, I_(sf).

The supply current tracking voltage, V_(TRK-ISP), is applied to thefirst input terminal 85 of the RF amplifier 102. The control andenvelope tracking voltage, V_(TRK-C-env), is applied to the second inputterminal 86 of the signal processor 80. The signal processor 80determines, scales, and integrates the difference between the controland envelope tracking voltage, V_(TRK-C-env), and the supply currenttracking voltage, V_(TRK-ISP), to produce a dynamic gate biasingvoltage, V_(DG), on the output terminal 176 of the signal processor 80.The dynamic gate biasing voltage, V_(DG), and thus the supply currents,I_(SP) and I_(SF), track the output envelope voltage, V_(env). Theefficiency of the RF amplifier 102 is improved because the supplycurrent, I_(SF), varies with the instantaneous power variationsassociated with the RF output signal, RF_(out), maintaining minimum DCbias power for a specific RF output power.

Referring to FIG. 15, a dynamically adaptable supply voltage circuit 300is employed to operate the RF amplifier 102 included in the dynamicallyadaptable supply voltage circuit 300 more efficiently and linearly byvarying a supply voltage, V_(S), applied to the RF amplifier 102.

The RF amplifier 102 as depicted in FIG. 15 has an N number of gainstages. A single stage RF amplifier, however, can be employed in thisarrangement without straying from the principles taught by thisinvention.

The dynamically adaptable supply voltage circuit 300 includes a variablepower supply 302. As with the dynamically adaptable supply currentcircuit 200, the RF input signal, RF_(in), fed into the RF inputterminal 120 of the RF amplifier 102 is amplified, and the intermediateRF output signal, RF_(out)′, on the RF output terminal 122 of the RFamplifier 102 is a modulated signal having the output envelope signal,S_(env).

The variable power supply 302 includes an output terminal 317 connectedto a power terminal 312 of the RF amplifier 102 to produce the supplyvoltage, V_(S), on the power terminal 312 of the RF amplifier 102. Thevariable power supply 302 further includes a control terminal 310 thatis employed to control a variable internal source voltage (not shown) inthe variable power supply 302.

The supply voltage, V_(S), is controlled through a feedback control loop303 that includes a signal processor 305, a voltage detector 304, acontroller 320, and a signal detector, such as the signal detector 202employed by the dynamically adaptable supply current circuit 200.

The voltage detector 304 includes an input terminal 313 connected to thepower terminal 312 of the RF amplifier 102, and an output terminal 315connected to a second input terminal 309 of the signal processor 305.The voltage detector 304 samples the supply voltage, V_(S), on the powerterminal 312 of the RF amplifier 102 and producing a sampled supplyvoltage signal, S_(VS), on the output terminal 315 of the voltagedetector 304, influencing a supply voltage tracking signal, S_(TRK-VS),on the second input terminal 309 of the signal processor 305. The supplyvoltage tracking signal, S_(TRK-VS), indicates the present level of thesupply voltage, V_(S). An example of a device that can be used as thevoltage detector 304 is a voltage divider.

Alternatively, as shown in FIG. 16, the feedback control loop 303includes a voltage detector 322 with an input terminal 324 connected tothe output terminal 317 of the variable power supply 302, and an outputterminal 326 connected to the power terminal 312 of the RF amplifier102. The voltage detector 322 samples the voltage on the input terminal324 of the voltage detector 322 and produces the supply voltage, V_(S),on output terminal 326 of the voltage detector 322, and thus the powerterminal 312 of the RF amplifier 102. The voltage detector furtherincludes a coupling terminal 328 connected to the second input terminal309 of the signal processor 305. The voltage detector 322 produces asampled supply voltage signal, S_(VS),′ on the coupling terminal 328 ofthe voltage detector 322, influencing the supply voltage trackingsignal, S_(TRK-VS), on the second input terminal 309 of the signalprocessor 305. An example of a device that can be used as the voltagedetector 322 is a resistor network.

The controller 330 includes an input terminal 334 into which an RF powerdesignating signal, S_(RFOUT), designating a desired average RF outputsignal power, P_(out), and thus, the desired supply voltage, V_(S), isinput. The controller 330 further includes an output terminal 332 thatis connected to a first input terminal 307 of the signal processor 305.The controller 330 produces a control signal, S_(C), on the outputterminal 332 of the controller 330 in accordance with the RF powerdesignating signal, S_(RFOUT), influencing a control and envelopetracking signal, S_(TRK-C-env), on the first input terminal 307 of thesignal processor 305. The control and envelope tracking signal,S_(TRK-C-env), indicates the desired average voltage level of the supplyvoltage, V_(S).

The input terminal 204 of the signal detector 202 is connected to the RFoutput terminal 122 of the RF amplifier 102. The signal detector 202samples the output signal envelope, S_(env), on the input terminal 204of the signal detector 202, producing the RF output signal, RF_(out), onthe output terminal 206 of the signal detector 202. The couplingterminal 208 of the signal detector 202 is connected to the first inputterminal 307 of the signal processor 305. The signal detector 202produces the sampled output envelope signal, S_(env),′ on the couplingterminal 208 of the signal detector 202, influencing the control andenvelope tracking signal, S_(TRK-C-env), on the first input terminal 307of the signal processor 305. The control and envelope tracking signal,S_(TRK-C-env), the present level of the output envelope signal, S_(env),as well as the desired level of the supply voltage, V_(S).Alternatively, the feedback control loop 305 comprises the signaldetector 210 depicted in FIG. 12 to sample the output envelope signal,S_(env).

The signal processor 305 includes a subtractor 306 and an amplifier 308.The subtractor 306 determines the difference between the control andenvelope tracking signal, S_(TRK-C-env), and the supply voltage trackingsignal, S_(TRK-VS). In alternative embodiments, the signal processor 305also includes an integrator. The amplifier 308 is preferably employed toscale the difference between the control and envelope tracking signal,S_(TRK-C-env), and the supply voltage tracking signal, S_(TRK-VS). Thegain of the amplifier 308 can be greater or less than unity. The signalprocessor 305 produces a dynamic biasing signal, S_(DB), on an outputterminal 311 of the signal processor 305. The output terminal 311 of thesignal processor 305 is connected to the control terminal 310 of thevariable power supply 302. The dynamic biasing signal, S_(DB), is fedinto the control terminal 310 of the variable power supply 302. Thesubtraction and scaling steps are not limited to the particular orderdescribed above, and can be performed in any order or simultaneously toobtain the dynamic biasing signal, S_(DB). The output voltage of thevariable power supply 302, and the supply voltage, V_(S), will varyaccording to the value of the dynamic biasing signal, S_(DB).

The control loop 303 allows the average supply voltage, V_(S), to be setby the controller 330, while allowing the supply voltage, V_(S), to alsovary, either discretely or continuously, with the level of the outputenvelope signal, S_(env).

In alternative embodiments, an adaptable supply voltage circuit iscreated by foregoing the employment of the signal detector 202. In thisembodiment, the controller 330 is employed to produce a control trackingsignal, S_(TRK-C), which indicates the desired average level of thesupply voltage, V_(S), on the first input terminal 307 of the signalprocessor 305. A biasing signal, S_(B), is produced on the outputterminal 311 of the signal processor 305, and applied to the controlterminal 310 of the variable power supply 302, allowing the averagesupply voltage, V_(S), to be set by the controller 330.

In further alternative embodiments, a dynamically adaptable supplyvoltage circuit is created by foregoing the employment of the controller330. In this embodiment, the signal detector 202 is employed to producean envelope tracking signal, S_(TRK-env), which indicates the presentlevel of the output envelope signal, S_(env), on the first inputterminal 307 of the signal processor 305. A dynamic biasing signal,S_(DB), is produced on the output terminal 311 of the signal processor305, and applied to the control terminal 310 of the variable powersupply 302, allowing the average supply voltage, V_(S), to vary with theoutput envelope signal, S_(env).

Particular aspects of the dynamically adaptable supply voltage circuit300 will now be described with reference to FIG. 17. To the extent theparticular aspects of the dynamically adaptable supply voltage circuit300 are the same as those of the dynamically adaptable supply currentcircuit 200, the same reference numerals have been used.

The controller 330 is configured in much the same manner as thecontroller 60 described with respect to FIG. 7. As with the dynamicallyadaptable supply current circuit 200 depicted in FIG. 14, thedynamically adaptable supply voltage circuit 300 employs the envelopedetector 202, which is connected to the RF output terminal 122 of the RFamplifier 102 to produce the temperature compensated sampled outputenvelope voltage, V_(env)″, on the coupling terminal 208 of the envelopedetector 202. The particular aspects of the envelope detector 202 havebeen set forth above with respect to FIG. 14. The voltage detector 304is a voltage divider comprising a pair of resistors R34 and R35connected in series between the input terminal 313 of the voltagedetector 304 and ground. The input terminal 313 of the voltage detector304 is connected to ground through the resistors R34 and R35. The outputterminal 315 of the voltage detector 304 is connected to ground throughthe resistor R35.

The signal processor 305 is a differential amplifier that embodies thesubtractor 306 and the amplifier 308. The signal processor 305 includesas its platform a differential operational amplifier U3. The first inputterminal 307 of the signal processor 305 is connected to thenoninverting input terminal of the differential operational amplifierU1. The second input terminal 309 of the signal processor 308 isconnected to the inverting input terminal of the differentialoperational amplifier U1. The output terminal of the operationalamplifier U1 is connected to the output terminal 311 of the signalprocessor 305.

The signal processor 305 further includes positive and negative powerterminals 319 and 321 that are respectively connected to the positiveand negative power terminals of the differential operational amplifierU3. The positive power terminal 319 of the signal processor 319 isconnected to the 5 volt DC bias. Alternatively, the positive powerterminal 319 of the signal processor 305 can be connected to the 2.7volt DC bias. The negative power terminal 321 of the signal processor305 is connected to the −5 volt DC bias. The decoupling capacitors C45and C46 are respectively connected between the 5 volt DC bias andground, and the −5 volt DC bias and ground.

In alternative embodiments, the signal processor 305 is an integratingamplifier.

The coupling terminal 208 of the envelope detection 202 and the outputterminal 332 of the controller 330 are electrically coupled to thesignal processor 305 through a voltage buffer 336 and a resistor R32.The first input terminal 307 of the signal processor 305 is groundedthrough a resistor R33. The values of the resistors R32 and R33 areselected to scale the temperature compensated sampled output envelopevoltage, V_(env)″. A control and envelope tracking voltage,V_(TRK-C-env), is produced across the resistor R33, and thus thenoninverting input terminal of the differential operational amplifierU3. This signal is a summation of V_(C) and V_(env)″.

The output terminal 315 of the voltage detector 304 is connected througha resistor R36 to the second input terminal 309 of the signal processor305. A supply voltage tracking voltage, V_(TRK-VS), is produced on thesecond input terminal 309 of the signal processor 305. The inputterminal 313 of the voltage detector 304 is connected to the secondinput terminal of the signal processor 305 through a resistor R37. Thevoltage gain of the differential operational amplifier U3 can be variedby selecting the values of the resistors R36 and R37.

The signal processor 305 produces a dynamic biasing voltage, V_(DB), onthe output terminal 311 of the signal processor 305 equal to the scaleddifference between the control and envelope tracking voltage,V_(TRK-C-env), and the supply voltage tracking voltage, V_(TRK-VS). Theoutput terminal 311 of the signal processor 305 is connected to thecontrol terminal 310 of the variable power supply 302. The dynamicbiasing voltage, V_(DB), is outputted to the control terminal 310 of thevariable power supply 302.

The variable power supply 302 comprises a bank of batteries V_(BAT1),V_(BAT2), V_(BAT3), and V_(BAT4) that represent an internal sourcevoltage of the power supply. The batteries V_(BAT1), V_(BAT2), V_(BAT3),and V_(BAT4) are connected in series to ground. The positive terminalsof each of the batteries V_(BAT1), V_(BAT2), V_(BAT3), and V_(BAT4) arerespectively connected to the collectors of a bank of matched NPNbipolar transistors Q4, Q5, Q6, and Q7. Schottky power diodes D7, D8,and D9 are respectively connected between the power terminals ofV_(BAT1), V_(BAT2), and V_(BAT3) and the collectors of transistors Q4,Q5, and Q6 to prevent the batteries from forward biasing the transistorbase-collector junction. The emitter of the transistor Q4 is connectedto the power terminal of the RF amplifier 301. The emitters oftransistors Q5, Q6, and Q7 are connected to the power terminal of the RFamplifier 301 through respective resistors R38, R39, and R40. The baseof the transistor Q4 is connected to the output terminal of thedifferential operational amplifier U3. The bases of the transistors Q5,Q6, and Q7 are connected to the output terminal of the differentialoperational amplifier U3 through respective resistors R41, R42, and R43.By selecting the values of the respective resistors R41, R42, and R43,the current flowing into the bases of the transistors Q5, Q6, and Q7 canbe adjusted to control the switching points of the transistors Q5, Q6,and Q7. Selection of the values of the resistors R34 and R35 in thevoltage detector 304 will also affect the switching points of thetransistors. The values of the resistors R38, R39, and R40 are selected,so that only the resistor connected to the transistor that is on willcarry a significant amount of current.

Typical resistance values that may be used for the respective resistorsR38-R43 are, e.g., 0.10Ω, 0.15Ω, 0.30Ω, 1.0Ω, 2.0Ω, and 9.7Ω. A typicalvoltage value for each of the batteries V_(BAT1), V_(BAT2), V_(BAT3),and V_(BAT4) is, e.g. , 1.2V.

The following is a description of the operation of dynamically adaptablesupply voltage circuit 300. To the extent that the operative aspects ofthe dynamically adaptable supply voltage circuit 300 similar to those ofthe amplifier 200 have been described above, they will not be repeatedbelow.

The controller 330 receives the RF power designating signal, S_(RFOUT),from the input terminal 334 of the controller 60, and accordinglyproduces the control voltage, V_(C), on the output terminal 332 of thecontroller 330. The control voltage, V_(C), is applied to the resistorR33 through the voltage buffer 336, influencing the control and envelopetracking voltage, V_(TRK-C-env). The control and envelope trackingvoltage, V_(TRK-C-env), varies with the control voltage, V_(C). That is,as the control voltage, V_(C), increases, the control and envelopetracking voltage, V_(TRK-C-env), increases. Likewise, as the controlvoltage, V_(C), decreases, the control and envelope tracking voltage,V_(TRK-C-env), decreases. The control and envelope tracking voltage,V_(TRK-C-env), indicates the desired average level of the supplyvoltage, V_(S).

The envelope detector 202 samples the output envelope voltage, V_(env),on the RF output terminal 122 of the RF amplifier 102, and produces thetemperature compensated sampled output envelope voltage, V_(env)″, onthe coupling terminal 208 of the envelope detector 202. The temperaturecompensated sampled output envelope voltage, V_(env)″, is applied to theresistor R33 through the voltage buffer 336, influencing the control andenvelope tracking voltage, V_(TRK-C-env), across the resistor R33. Thecontrol and envelope tracking voltage, V_(TRK-C-env), varies with theoutput envelope voltage, V_(env). That is, as the output envelopevoltage, V_(env), increases, the control and envelope tracking voltage,V_(TRK-C-env), increases. Likewise, as the output envelope voltage,V_(env), decreases, the control and envelope tracking voltage,V_(TRK-C-env), decreases. The control and envelope tracking voltage,V_(TRK-C-env), indicates the present level of the output envelopevoltage, V_(env), as well as the desired level of the supply voltage,V_(S).

The variable power supply 302 produces a supply voltage, V_(S), on thepower terminal 312 of the RF amplifier 102. The supply voltage, V_(S),is applied to the voltage detector 304, producing the sampled supplyvoltage, V_(S)′, across the resistor R35 of the voltage detector 304.The supply voltage, V_(S), influences the supply voltage trackingvoltage, V_(TRK-VS), across the resistors R35 and R36. The supplyvoltage tracking voltage, V_(TRK-VS), varies with the supply voltage,V_(S). That is, as the supply voltage, V_(S), increases, the supplyvoltage tracking voltage, V_(TRK-VS), increases. Likewise, as the supplyvoltage, V_(S), decreases, the supply voltage tracking voltage,V_(TRK-VS), decreases. The supply voltage tracking voltage, V_(TRK-VS),indicates the present level of the supply voltage, V_(S).

The control and envelope tracking voltage, V_(TRK-C-env), is applied tothe first input terminal 307 of the signal processor 305. The supplyvoltage tracking voltage, V_(TRK-VS), is applied to the second inputterminal 309 of the signal processor 305. The signal processor 305 takesthe difference between the control and envelope tracking voltage,V_(TRK-C-env), and the supply voltage tracking voltage, V_(TRK-VS), andis scaled to produce the dynamic biasing voltage, V_(DB), on the outputterminal 311 of the signal processor 305. The dynamic biasing voltage,V_(DB), is then fed into the control terminal 310 of the variable powersupply 302, biasing the bases of the respective transistors Q4, Q5, Q6,and Q7. The resistors R41, R42, and R43 create an increasing amount ofresistance between the respective bases of the transistors Q5, Q6, andQ7 and the control terminal 310 of the variable power supply 302. Adecreasing amount of bias voltage is applied to the respective bases ofthe transistors Q4, Q5, Q6, and Q7.

As the level of the output envelope voltage, V_(env), and thus the levelof the dynamic biasing voltage, V_(DB), increases from a relatively lowlevel to a relatively high level, the transistors Q4, Q5, Q6, and Q7will sequentially turn on, thus sequentially turning on the batteriesV_(BAT1), V_(BAT2), V_(BAT3), and V_(BAT4). Likewise, as the level ofthe output envelope voltage, V_(env), and thus the level of the dynamicbiasing voltage, V_(DB), decreases from a relatively high level to arelatively low level, the transistors Q7, Q6, Q5, and Q4 willsequentially turn off, sequentially turning off the batteries V_(BAT4),V_(BAT3), V_(BAT2), and V_(BAT1). Depending on the level of the dynamicbiasing voltage, V_(DB), applied to the control terminal 310 of thevariable power supply 302, and based on an individual battery voltage of1.2V, the internal source voltage produced by the bank of batteriesV_(BAT1), V_(BAT2), V_(BAT3), and V_(BAT4), could be 1.2V, 2.4V, 3.6V,or 4.8V. The total voltage of the batteries vary discretely. Inalternative embodiments, the total voltage of the batteries variescontinuously.

The supply voltage, V_(S), that is applied to the power terminal 312 ofthe RF amplifier 102 is proportional to the dynamic biasing voltage,V_(DB), and thus the output envelope voltage, V_(env). The supplyvoltage, V_(S), will vary with the output envelope voltage, V_(env).When the power level of the RF output signal, RF_(out), is high, thelevel of the supply voltage, V_(S), will be correspondingly high.Likewise, when the power level of the RF output signal, RF_(out), islow, the level of the supply voltage, V_(S), will be correspondinglylow. In this manner, efficient linear operation of the RF amplifier 102is ensured.

Only the minimum number of batteries V_(BAT1), V_(BAT2), V_(BAT3), andV_(BAT4) are employed to ensure that the supply voltage, V_(S), tracksthe output envelope voltage, V_(env), and the dynamically adaptablesupply voltage circuit 300 is more power efficient. It should be notedthat the corresponding number of batteries and transistors can varydepending on the amount of efficiency required of the dynamicallyadaptable supply voltage circuit 300. In general, the smaller thebattery voltage step, the more power efficient the dynamically adaptablesupply voltage circuit 300 becomes. The bandwidth of the feedbackcontrol loop 303 is preferably greater than the maximum frequency of theRF signal envelope to allow the switching capability of the variablepower supply 302 to properly track the output envelope voltage, V_(env).

Co-pending application Ser. No. 09/089,811, which is directed to adynamically adaptable supply voltage circuit, is filed concurrentlyherewith and fully incorporated herein by reference.

The supply voltage, V_(S), varying capability of the dynamicallyadaptable supply voltage circuit 300 can be combined with the supplycurrent, I_(S), varying capability of the dynamically adaptable supplycurrent circuit 200 to form a dynamically adaptable supply current andvoltage circuit 400 as generally depicted in FIG. 18. To the extent thecomponents of the dynamically adaptable supply current and voltagecircuit 400 are the same as those of the dynamically adaptable supplycurrent circuit 200 and dynamically adaptable supply voltage circuit 300respectively depicted in FIGS. 11 and 15, the same reference numeralshave been used.

The dynamically adaptable supply current and voltage circuit 400 employsthe feedback control loop 78 of the dynamically adaptable supply currentcircuit 200 to vary the supply current, I_(SP) and I_(SF), in therespective preceding gain stage 104 and final gain stage 106 of the RFamplifier 102.

The output terminal 317 of the variable power supply 302 is connected tothe power terminal 110 of the final gain stage 106 of the RF amplifier102 producing the supply current, I_(SF), in the final gain stage 106,and the supply voltage, V_(S), on the power terminal 110 of the finalgain stage 106. The input terminal 82 of the current detector 58 isconnected to the output terminal 317 of the variable power supply 302,and the output terminal 83 of the current detector 58 is connected tothe power terminal 108 of the preceding gain stage 104, producing thesupply current, I_(SP), in the preceding gain stage 104 of the RFamplifier 102. The coupling terminal 84 of the current detector 58 isconnected to the first input terminal 85 of the signal processor 80. Thecurrent detector 58 produces the sampled supply current signal, S_(ISP),on the coupling terminal 84 of the current detector 58, influencing thesupply current tracking signal, S_(TRK-ISP), on the first input terminal85 of the signal processor 80.

A controller 402 similar to the controllers 60 and 330 described above,produces a control signal, S_(C1), on an output terminal 404 of thecontroller 400 in accordance with an RF power indicating signal,S_(RFOUT), applied on an input terminal 408 of the controller 402,influencing a control and envelope tracking signal, S_(TRK-C-env1), onthe second input terminal 86 of the signal processor 80.

The input terminal 204 of the signal detector 202 is connected to the RFoutput terminal 122 of the RF amplifier 102 producing the RF outputsignal, RF_(out), on the output terminal 206 of the signal detector 202.The coupling terminal 208 of the signal detector 202 is connected to thesecond input terminal 86 of the signal processor 80. The signal detector202 produces the sampled output envelope signal, S_(env)′, on thecoupling terminal 208 of the signal detector 202, influencing thecontrol and envelope tracking signal, S_(TRK-C-env), on the second inputterminal 86 of the signal processor 80. The output terminal 61 of thecontroller 60 is connected to the second input terminal 86 of the signalprocessor 80.

The signal processor 80 determines, scales, and integrates thedifference between the control and envelope tracking signal,S_(TRK-C-env1), and the supply current tracking signal, S_(TRK-ISP), toproduce a dynamic gate biasing signal, S_(DG1), on the output terminal87 of the signal processor 80. The output terminal 87 of the signalprocessor 80 is connected to the control terminal 112 of the RFamplifier 102, producing the dynamic gate biasing signal, S_(DG1), onthe control terminal 112 of the RF amplifier 102. The supply currents,I_(SP) and I_(SF), are set to a desired level by the controller 402 andvary from that level with the output envelope signal, S_(env).

The dynamically adaptable supply current and voltage circuit 400 alsoemploys the variable power supply 302 and feedback control loop 303 ofthe dynamically adaptable supply voltage circuit 300 to vary the supplyvoltage, V_(S).

The input terminal 313 of the voltage detector 304 is connected to theoutput terminal 317 of the variable power supply 302 and the outputterminal 315 of the voltage detector 304 is connected to the secondinput terminal 309 of the signal processor 305. The voltage detector 304produces the sampled supply voltage signal, S_(VS), on the outputterminal 315 of the voltage detector 304, influencing the supply voltagetracking signal, S_(TRK-VS), on the second input terminal 309 of thesignal processor 305.

The controller 402 produces a control signal, S_(C2), on an outputterminal 406 of the controller 400 in accordance with the RF powerindicating signal, S_(RFOUT), applied on the input terminal 408 of thecontroller 402, influencing a control and envelope tracking signal,S_(TRK-C-env2), on the first input terminal 307 of the signal processor305.

The coupling terminal 208 of the signal detector 202 is also connectedto the first input terminal 307 of the signal processor 305, influencingthe control and envelope tracking signal, S_(TRK-C-env2), on the firstinput terminal 307 of the signal processor 305.

The signal processor 305 determines and scales the difference betweenthe control and envelope tracking signal, S_(TRK-C-env2), and the supplyvoltage tracking signal, S_(TRK-VS), to produce a dynamic gate biasingsignal, S_(DG2), on the output terminal 311 of the signal processor 305.The output terminal 311 of the signal processor 305 is connected to thecontrol terminal 310 of the variable power supply 302. The dynamic gatebiasing signal, S_(DG2), is produced on the control terminal 310 of thevariable power supply 302. The supply voltage, V_(S), is set to adesired level by the controller 402 and varies from that level with theoutput envelope signal, S_(env).

Operation of the dynamically adaptable supply current and voltagecircuit 400 is similar to that of the dynamically adaptable supplycurrent circuit 200 and dynamically adaptable supply voltage circuit300. The supply currents, I_(SP) and I_(SF), and the supply voltage,V_(S), can be independently controlled by the respective control loops78 and 303.

With respect to the adaptable supply current circuit 100, dynamicallyadaptable supply current circuit 200, dynamically adaptable supplyvoltage circuit 300, and the dynamically adaptable supply current andvoltage circuit 400, variation of the RF amplifier supply current and/orthe supply voltage creates a phase shift in the RF output signal,RF_(out), at the output of the RF amplifier, which manifests itself asphase distortion in phase modulated signals. To compensate for thisphase distortion, the phase distortion of the RF output signal,RF_(out), can be determined and compensated for by altering (i.e.,predistorting) the RF signal prior to its arrival at the RF amplifier.

As shown in FIG. 19, a bypassable circuit 500 is employed to operate anRF amplifier more efficiently and linearly by operating the RF amplifieronly during a high RF output power condition, i.e., a condition whereinthe RF amplifier is employed to produce a relatively high RF outputsignal power, P_(out), and bypassing the RF amplifier during a low RFoutput power condition, i.e., a condition wherein the RF amplifier isbypassed to produce a relatively low RF output signal power, P_(out). Tothe extent that the bypassable circuit 500 employs components that aresimilar to those of previous embodiments, the same reference numeralshave been used.

The bypassable circuit 500 includes a first driver 504 and a seconddriver 506, which act as pre-amplification means. An RF input signal,RF_(in), is fed into an RF input terminal 516 of the first driver 504and an RF input terminal 518 of the second driver 506. The first driver504 includes an output terminal 520 connected to the RF input terminal120 of the RF amplifier 102. The second driver 506 includes an outputterminal 522 connected to the RF output terminal 122 of the RF amplifier102. The particular aspects of the drivers 504 and 506 are in accordancewith typical known drivers.

The bypassable circuit 500 further includes a controller 502. Thecontroller 502 includes an input terminal 524 into which a RF powerdesignating signal, S_(RFOUT), indicating the existence of a high RFoutput power condition or a low RF output power condition, is input. Thecontroller 502 includes a first output terminal 512 and a second outputterminal 514. The first output terminal 512 of the controller 502 isconnected to a control terminal 508 of the first driver 504, and thesecond output terminal 514 of the controller 502 is connected to acontrol terminal 510 of the second driver 506.

A switch 528 is connected between the power supply 54 and the RFamplifier 102. The switch 528 includes an input terminal 530 connectedto the output terminal 55 of the power supply 54, and an output terminal532 connected to the power terminal 312 of the RF amplifier 102. Theswitch 528 includes a control terminal 534 that allows the switch 528 toalternately open and close. The control terminal 534 of the switch 528is connected to a third output terminal 526 of the controller 502.

The following is a description of the operation of the bypassablecircuit 500. The handset or WLL terminal receives the RF powerdesignating signal, S_(RFOUT), through the input terminal 524 of thecontroller 502. During a high RF output power condition designated bythe RF power designating signal, S_(RFOUT), the controller 502 producesa high select signal, S_(SEL1), on the first output terminal 512 of thecontroller 502, and a low select signal, S_(SEL2), on the second outputterminal 514 of the controller 502. The high select signal, S_(SEL1), isapplied to the control terminal 508 of the first driver 504 to activatethe first driver 504. The low select signal, S_(SEL2), is applied to thecontrol terminal 510 of the second driver 506 to inactivate the seconddriver 506. The controller 502 also produces a high switch signal,S_(SW), on the third output terminal 526 of the controller 502. The highswitch signal, S_(SW), is applied to the control terminal 534 of theswitch 528, closing the switch 528 and providing the flow of power fromthe power supply 54 to the RF amplifier 102.

The first driver 504 amplifies the RF input signal, RF_(in), andproduces an RF signal, RF_(in)″, on the RF output terminal 520 of thefirst driver 504. The RF signal, RF_(in)″, is applied to the RF inputterminal 120 of the RF amplifier 102. The RF amplifier 102 amplifies theRF signal, RF_(in)″, and produces an RF output signal, RF_(out), on theRF output terminal 122 of the RF amplifier 102 that is effectivelyamplified by the first driver 504 and the RF amplifier 102.

During a low RF output power condition designated by the RF powerdesignating signal, S_(RFOUT), the controller 502 produces a high selectsignal, S_(SEL2), on the second output terminal 514 of the controller502, and a low select signal, S_(SEL1), on the first output terminal 512of the controller 502. The high select signal, S_(SEL2), is applied tothe control terminal 510 of the second driver 506 to activate the seconddriver 506. The low select signal, S_(SEL1), is applied to the controlterminal 508 of the first driver 504 to inactivate the first driver 504.The controller 502 also produces a low switch signal, S_(SW), on thethird output terminal 526 of the controller 502. The low switch signal,S_(SW), is applied to the control terminal 534 of the switch 528,opening the switch 528 and impeding the flow of power from the powersupply 54 to the RF amplifier 102.

The second driver 506 amplifies the RF input signal, RF_(in), andproduces the RF signal, RF_(in)″, on the RF output terminal 520 of thefirst driver 504. The RF signal, RF_(in)″, is applied to the RF outputterminal 122 of the RF amplifier 102, producing an RF output signal,RF_(out), that is amplified solely by the second driver 506.

Alternatively, the controller 502, the respective drivers 504 and 506,and the switch 528 can be configured so that the respective drivers 504and 506 are activated by low select signals, S_(SEL1) and S_(SEL2),rather than high select signals, S_(SEL1) and S_(SEL2), and the switch528 is closed by a low switch signal, S_(SW), rather than a high switchsignal, S_(SW).

More alternatively, the controller 502 and the respective drivers 504and 506 can be configured so that the respective drivers 504 and 506 areactivated or inactivated by a single select signal, S_(SEL1), producedon a single control terminal of the controller 502. In this case, acomponent such as an inverter can be placed between the single controlterminal of the controller 502 and one of the respective controlterminals of the drivers 504 and 506. If the inverter is placed betweenthe signal control terminal of the controller 502 and the controlterminal 510 of the second driver 506, a high select signal, S_(SEL),produced on the single control terminal of the controller 502 produces ahigh select signal, S_(SEL), on the control terminal 508 of the firstdriver 504, activating the first driver 504, and produces a low selectsignal, S_(SEL), on the control terminal 510 of the second driver 506,inactivating the second driver 506. Contrariwise, a low select signal,S_(SEL), produced on the single control terminal of the controller 502produces a high select signal, S_(SEL), on the control terminal 510 ofthe second driver 506, activating the second driver 506, and produces alow select signal, S_(SEL), on the control terminal 508 of the firstdriver 504, inactivating the first driver 504.

The RF amplifier 102 is only operated when a high power RF outputsignal, RF_(out), is required, conserving energy expended by thebypassable circuit 500 when a low power RF output signal, RF_(in), isrequired.

FIG. 20 shows a bypassable circuit 550. The bypassable circuit 550 issimilar to the bypassable circuit 500 shown in FIG. 19, and to theextent the components of each are the same, the same reference numeralshave been used. The bypassable circuit 550 differs from the bypassablecircuit 500 in that a third driver 552 and a fourth driver 554 areemployed to provide an RF output signal, RF_(out), with a higher powerlevel than that of the RF output signal, RF_(out), produced by thebypassable circuit 500.

The third driver 552 includes an input terminal 556 connected to theoutput terminal 122 of the RF amplifier. The third driver 552 furtherincludes a control terminal 560 connected to the first output terminal512 of the controller 502. The fourth driver 554 includes an inputterminal 562 connected to the output terminal 522 of the second driver506 and an output terminal 564 connected to an output terminal 558 ofthe third driver 552. The fourth driver 554 further includes a controlterminal 566 connected to the second output terminal 514 of thecontroller 502.

The operation of the bypassable circuit 550 is similar to that of thebypassable circuit 500 with the exception that during a high RF outputpower condition, a high select signal, S_(SEL1), is produced on thefirst output terminal 512 of the controller 502 activating the thirddriver 552 as well as the first driver 504, and a low select signal,S_(SEL2), is produced on the second output terminal 514 of thecontroller 502 inactivating the fourth driver 554 as well as the seconddriver 506. An RF output signal, RF_(out), is produced on the outputterminal 558 of the third driver 552 that has been amplified by thefirst driver 504, the RF amplifier 102, and the third driver 552.Contrariwise, during a low RF output power condition, a high selectsignal, S_(SEL2), is produced on the second output terminal 514 of thecontroller 502 activating the fourth driver 554 as well as the seconddriver 506, and a low select signal, S_(SEL1), is produced on the firstoutput terminal 512 of the controller 502 inactivating the third driver552 as well as the first driver 504. An RF output signal, RFout, isproduced on the output terminal 558 of the third driver 552 that hasbeen amplified solely by the second driver 506 and the fourth driver556.

Co-pending application Ser. No. 09/080,812, which is directed to abypassable circuit, is filed concurrently herewith and fullyincorporated herein by reference.

The bypassable circuit 500 or bypassable circuit 550 can be employed tomake the amplifier circuits 100, 200, 300, or 400 respectively depictedin FIGS. 6, 11, 15, and 18 more power efficient.

For instance, as depicted in FIG. 21, a switchable and dynamicallyadaptable supply current circuit 600 employs the bypassable circuit 500as configured in FIG. 19, and the feedback control loop 78 as configuredin FIG. 6 to operate the RF amplifier 102 during a high RF output powercondition more efficiently and linearly by controlling the supplycurrents, I_(SP) and I_(SF), within the respective preceding stage 104and final stage 106 of the RF amplifier 102, while bypassing the RFamplifier 102 during a low RF output power condition.

The switchable and dynamically adaptable supply current circuit 600includes a controller 602. The controller 602 includes an input terminal604 into which an RF power designating signal, S_(RFOUT), in input. TheRF power designating signal, S_(RFOUT), indicates the existence of ahigh RF output power condition or a low RF output power condition, aswell as the desired average RF output signal power, P_(out), and thus,the desired supply current, I_(S). The controller 602 includes a firstoutput terminal 606 and a second output terminal 608. The first outputterminal 606 of the controller 602 is connected to the control terminal508 of the first driver 504, and the second output terminal 608 of thecontroller 602 is connected to the control terminal 510 of the seconddriver 506.

The switch 528 is connected between the power supply 54 and the currentdetector 58 of the control feedback loop 78. The input terminal 530 ofthe switch 54 is connected to the output terminal 55 of the power supply54, and the output terminal 532 of the switch 528 is connected to theinput terminal 82 of the current detector 58. The output terminal 532 ofthe switch 528 is also connected to the power terminal 110 of the finalgain stage 106 of the RF amplifier 102. The control terminal 534 of theswitch 528 is connected to a third output terminal 610 of the controller602.

During a high RF output power condition, the controller 602 produces ahigh select signal, S_(SEL1), on the first output terminal 606 of thecontroller 602, and a low select signal, S_(SEL2), on the second outputterminal 608 of the controller 602 to activate the first driver 504 andinactivate the second driver 506. The controller 602 also produces ahigh switch signal, S_(SW), on the third output terminal 610. The highswitch signal, S_(SW), is applied to the control terminal 534 of theswitch 528, closing the switch 528 and providing the supply current,I_(SP), in the preceding gain stage 104 of the RF amplifier 102, and thesupply current, I_(SF), in the final gain stage 106 of the RF amplifier102. The RF input signal, RF_(in), on the input terminal 516 of thefirst driver 504 is amplified through the first driver 504 and the RFamplifier 102 to produce the RF output signal, RF_(out), on the outputterminal 122 of the RF amplifier 102.

During a low RF output power condition, the controller 602 produces ahigh select signal, S_(SEL2), on the second output terminal 608 of thecontroller 602, and a low select signal, S_(SEL1), on the first outputterminal 606 of the controller 602 to activate the second driver 506 andinactivate the first driver 504. The controller 602 also produces a lowswitch signal, S_(SW), on the third output terminal 610. The low switchsignal, S_(SW), is applied to the control terminal 534 of the switch528, opening the switch 528 and impeding the flow of power from thepower supply 54 to the RF amplifier 102. The RF input signal, RF_(in),on the input terminal 518 of the second driver 506 is amplified solelythrough the second driver 504 to produce the RF output signal, RF_(out),on the output terminal 122 of the RF amplifier 102 effectively bypassingthe RF amplifier 102.

During a high RF output power condition, the switchable and dynamicallyadaptable supply current circuit 600 employs the current detector 58,signal detector 202, and the signal processor 80 of the feedback controlloop 78, along with the controller 602, to control the supply currents,I_(SP) and I_(SF), in the preceding gain stage 104 and final gain stage106 of the RF amplifier 102. The controller 602 includes a fourth outputterminal 612 connected to the second input terminal 86 of the signalprocessor 80. The controller 602 produces the control signal, S_(C), onthe fourth output terminal 612 of the controller 602, influencing thecontrol and envelope tracking signal, S_(TRK-C-env), on the second inputterminal 86 of the signal processor 80. The control and envelopetracking signal, S_(TRK-C-env), is also influenced by the sampledenvelope output signal, S_(env)′, produced on the coupling terminal 208of the signal detector 202. The supply current tracking signals,S_(TRK-ISP), on the first input terminal 85 of the signal processor 80is influenced by the sampled supply current signal, S_(ISP), produced onthe coupling terminal 84 of the current detector 58, The signalprocessor 80 determines, scales, and integrates the difference betweenthe supply current tracking signal, S_(TRK-ISP), and the control andenvelope tracking signal, S_(TRK-C-env), to obtain the dynamic biasinggate signal, S_(DG), at the output terminal 112 of the signal processor80. The dynamic biasing gate signal, S_(DG), is applied to the controlterminal 112 of the RF amplifier 102, controlling the supply current,I_(SF), in the final gain stage 106 of the RF amplifier 102.

As depicted in FIG. 22, a switchable and dynamically adaptable supplyvoltage circuit 700 employs and bypassable circuit 500 as configured inFIG. 19, and the feedback control loop 303 as configured in FIG. 15, tooperate the RF amplifier 102 during a high RF output power conditionmore efficiently and linearly by controlling the supply voltage, VS,across the RF amplifier 120, while allowing the RF Amplifier 102 to bebypassed during a low RF output power condition.

The switchable and dynamically adaptable supply voltage circuit 700includes a controller 702. The controller 702 includes an input terminal704 into which an RF power designating signal, S_(RFOUT), in input. TheRF power designating signal, S_(RFOUT), indicates the existence of ahigh RF output power condition or a low RF output power condition, aswell as the desired average RF output signal power, P_(out), and thus,the desired supply voltage, V_(S). The controller 702 includes a firstoutput terminal 706 and a second output terminal 708. The first outputterminal 706 of the controller 702 is connected to the control terminal508 of the first driver 504, and the second output terminal 708 of thecontroller 702 is connected to the control terminal 510 of the seconddriver 506.

The switch 528 is connected between the variable power supply 302 andthe RF amplifier 102. The input terminal 530 of the switch 528 isconnected to the output terminal 317 of the variable power supply 302,and the output terminal 532 of the switch 528 is connected to the powerterminal 312 of the RF amplifier 102. The control terminal 534 of theswitch 528 is connected to a third output terminal 710 of the controller702.

During a high RF output power condition, the controller 702 produces ahigh select signal, S_(SEL1), on the first output terminal 706 of thecontroller 702, and a low select signal, S_(SEL2), on the second outputterminal 708 of the controller 702 to activate the first driver 504 andinactivate the second driver 506. The controller 702 also produces ahigh switch signal, S_(SW), on the third output terminal 710. The highswitch signal, S_(SW), is applied to the control terminal 534 of theswitch 528, closing the switch 528 and providing the supply voltage,V_(S), on the power terminal 312 of the RF amplifier 102. The RF inputsignal, RF_(in), on the input terminal 516 of the first driver 504 isamplified through the first driver 504 and the RF amplifier 102 toproduce the RF output signal, RF_(out), on the output terminal 122 ofthe RF amplifier 102.

During a low RF output power condition, the controller 702 produces ahigh select signal, S_(SEL2), on the second output terminal 708 of thecontroller 702, and a low select signal, S_(SEL1), on the first outputterminal 706 of the controller 702 to activate the second driver 506 andinactivate the first driver 504. The controller 702 also produces a lowswitch signal, S_(SW), on the third output terminal 710. The low switchsignal, S_(SW), is applied to the control terminal 534 of the switch528, opening the switch 528 and impeding the flow of power from thepower supply 54 to the RF amplifier 102. The RF input signal, RF_(in),on the input terminal 518 of the second driver 506 is amplified solelythrough the second driver 504 to produce the RF output signal, RF_(out),on the output terminal 122 of the RF amplifier 102, effectivelybypassing the RF amplifier 102.

During a high RF output power condition, the switchable and dynamicallyadaptable supply current circuit 700 employs the signal detector 202,voltage detector 304, and signal processor 305 of the feedback controlloop 303, along with the controller 702, to control the supply voltage,V_(S), on the power terminal 312 of the RF amplifier 102. The controller702 includes a fourth output terminal 712 connected to the first inputterminal 307 of the signal processor 305. The controller 702 producesthe control signal, S_(C), on the fourth output terminal 712 of thecontroller 602, influencing the control and envelope tracking signal,S_(TRK-C-env), on the first input terminal 307 of the signal processor80. The control and envelope tracking signal, S_(TRK-C-env), is alsoinfluenced by the sampled envelope output signal, S_(env)′, produced onthe coupling terminal 208 of the signal detector 202. The supply voltagetracking signal, S_(TRK-VS), on the second input terminal 309 of thesignal processor 305 is influenced by the sampled supply voltage signal,S_(VS), produced on the output terminal 315 of the voltage detector 304.The signal processor 305 determines and scales, and alternativelyintegrates, the difference between the control and envelope trackingsignal, S_(TRK-C-env), and the supply voltage tracking signal,S_(TRK-VS), to obtain the dynamic gate biasing signal, S_(DG), at theoutput terminal 311 of the signal processor 305. The dynamic gatebiasing signal, S_(DG), is applied to the control terminal 310 of thevariable power supply 302, controlling the supply voltage, V_(S), on thepower terminal 312 of the RF amplifier 102.

As depicted in FIG. 23, a switchable and dynamically adaptable supplycurrent and voltage circuit 800 employs the bypassable circuit 500 asconfigured in FIG. 19, the feedback control loop 78 as depicted in FIG.6, and the feedback control loop 303 as configured in FIG. 15 to operatethe RF amplifier 102 during a high RF output power condition moreefficiently and linearly by controlling the supply currents, I_(SP) andI_(SF), within the preceding gain stage 104 and final gain stage 106 ofthe RF amplifier 102 and the supply voltage, V_(S), across the RFamplifier 102, while allowing the RF amplifier 102 to be bypassed duringa low RF output power condition.

The switchable and dynamically adaptable supply current and voltagecircuit 800 includes a controller 802. The controller 802 includes aninput terminal 804 into which an RF power designating signal, S_(RFOUT),in input. The RF power designating signal, S_(RFOUT), indicates theexistence of a high RF output power condition or a low RF output powercondition, as well as the desired average RF output signal power,P_(out), and thus, the desired supply current, I_(S), and supplyvoltage, V_(S). The controller 802 includes a first output terminal 806and a second output terminal 808. The first output terminal 806 of thecontroller 802 is connected to the control terminal 508 of the firstdriver 504, and the second output terminal 708 of the controller 702 isconnected to the control terminal 510 of the second driver 506.

The switch 528 is connected between the variable power supply 54 and thecurrent detector 58 of the control feedback loop 78. The input terminal530 of the switch 54 is connected to the output terminal 317 of thevariable power supply 302, and the output terminal 532 of the switch 528is connected to the input terminal 82 of the current detector 58. Theoutput terminal 532 of the switch 528 is also connected to the powerterminal 110 of the final gain stage 106 of the RF amplifier 102. Thecontrol terminal 534 of the switch 528 is connected to a third outputterminal 810 of the controller 802.

During a high RF output power condition, the controller 802 produces ahigh select signal, S_(SEL1), on the first output terminal 806 of thecontroller 802, and a low select signal, S_(SEL2), on the second outputterminal 808 of the controller 802 to activate the first driver S04 andinactivate the second driver 506. The controller 802 also produces ahigh switch signal, S_(SW), on the third output terminal 810. The highswitch signal, S_(SW), is applied to the control terminal 534 of theswitch 528, closing the switch 528 and providing the supply current,I_(SP), in the preceding gain stage 104 of the RF amplifier 102, thesupply current, I_(SF), in the final gain stage 106 of the RF amplifier102, and the supply voltage, V_(S), on the power terminal 110 of thefinal gain stage 106 of the RF amplifier 102. The RF input signal,RF_(in), on the input terminal 516 of the first driver 504 is amplifiedthrough the first driver 504 and the RF amplifier 102 to produce the RFoutput signal, RF_(out), on the output terminal 122 of the RF amplifier102.

During a low RF output power condition, the controller 802 produces ahigh select signal, S_(SEL2), on the second output terminal 808 of thecontroller 802, and a low select signal, S_(SEL1), on the first outputterminal 806 of the controller 802 to activate the second driver 506 andinactivate the first driver 504. The controller 802 also produces a lowswitch signal, S_(SW), on the third output terminal 810. The low switchsignal, S_(SW), is applied to the control terminal 534 of the switch528, opening the switch 528 and impeding the flow of power from thepower supply 54 to the RF amplifier 102. The RF input signal, RF_(in),on the input terminal 518 of the second driver 506 is amplified solelythrough the second driver 504 to produce the RF output signal, RF_(out),on the output terminal 122 of the RF amplifier 102, effectivelybypassing the RF amplifier 102.

During a high RF output power condition, the switchable and dynamicallyadaptable supply current and voltage circuit 800 employs the currentdetector 58, the signal detector 202, and the signal processor 80 of thefeedback control loop 78, along with the controller 802 to control thesupply current, I_(SF), in the final gain stage 106 of the RF amplifier102. The controller 602 includes a fourth output terminal 812 connectedto the second input terminal 86 of the signal processor 80. Thecontroller 602 produces a control signal, S_(C1), on the fourth outputterminal 612 of the controller 602, influencing the control and envelopetracking signal, S_(TRK-C-env), on the second input terminal 86 of thesignal processor 80. The control and envelope tracking signal,S_(TRK-C-env), is also influenced by the sampled envelope output signal,S_(env)′, produced on the coupling terminal 208 of the signal detector202. The supply current tracking signal, S_(TRK-ISP), on the first inputterminal 85 of the signal processor 80 is influenced by the sampledsupply current signal, S_(ISP), produced on the coupling terminal 84 ofthe current detector 58. The signal processor 80 determines, scales, andintegrates the difference between the supply current tracking signal,S_(TRK-ISP), and the control and envelope tracking signal,S_(TRK-C-env1), to obtain the dynamic biasing gate signal, S_(DG1), atthe output terminal 112 of the signal processor 80. The dynamic biasinggate signal, S_(DG1), is applied to the control terminal 112 of the RFamplifier 102, controlling the supply currents, I_(SP) and I_(SF), inthe preceding gain stage 104 and final gain stage 106 of the RFamplifier 102.

During a high RF output power condition, the switchable and dynamicallyadaptable supply current and voltage circuit 800 also employs the signaldetector 202, voltage detector 304, and signal processor 305 of thefeedback control loop 303, along with the controller 802, to control thesupply voltage, V_(S), on the power terminal of the RF amplifier 102.The controller 802 includes a fifth output terminal 814 connected to thefirst input terminal 307 of the signal processor 305. The controller 802produces the control signal, S_(C2), on the fifth output terminal 814 ofthe controller 802, influencing the control and envelope trackingsignal, S_(TRK-C-env), on the first input terminal 307 of the signalprocessor 80. The control and envelope tracking signal, S_(TRK-C-env2),is also influenced by the sampled envelope output signal, S_(env)′,produced on the coupling terminal 208 of the signal detector 202. Thesignal processor 305 determines, scales, and in alternative embodimentsintegrates, the difference between the control and envelope trackingsignal, S_(TRK-C-env2), and the supply voltage tracking signal,S_(TRK-VS), to obtain the dynamic gate biasing signal, S_(DG2), at theoutput terminal 311 of the signal processor 305. The dynamic gatebiasing signal, S_(DG2), is applied to the control terminal 310 of thevariable power supply 302, controlling the supply voltage, V_(S), on thepower terminal 110 of the final gain stage 106 of the RF amplifier 102.

As shown in FIG. 24, a bypassable circuit 900 is employed to operate anRF amplifier more efficiently and linearly by operating the RF amplifieronly during a high RF output power condition, and bypassing the RFamplifier during a low RF output power condition. To the extent that thebypassable circuit 900 employs components that are similar to those ofprevious embodiments, the same reference numerals have been used.

The bypassable circuit 900 includes a first switch 904 having an inputterminal 918 and an output terminal 920, and a second switch 906 havingan input terminal 924 and an output terminal 926. The input terminal 918and output terminal 920 of the first switch 904 are respectivelyconnected to the RF output terminal 130 of the driver 101, which acts asa pre-amplification means, and the RF input terminal 120 of the RFamplifier 102. The input terminal 924 and output terminal 926 of thesecond switch 906 are respectively connected to the output terminal 130of the driver 101 and an RF output terminal 946 of the amplifier circuit900. The first switch 904 and the second switch 906 respectively includecontrol terminals 922 and 928 to allow the first switch 906 and thesecond switch 908 to alternately open and close.

A third switch 908 is connected between the power supply 54 and the RFamplifier 102. The third switch 908 includes an input terminal 930connected to the output terminal 55 of the power supply 54, and anoutput terminal 932 connected to the power terminal 312 of the RFamplifier 102. The third switch 936 includes a control terminal 942 thatallows the third switch 936 to alternately open and close.

A fourth switch 936 is connected between the RF amplifier 102 and theexternal circuitry. The fourth switch 936 includes an input terminal 938and an output terminal 940 that are respectively connected to the RFoutput terminal 122 of the RF amplifier 102 and the RF output terminal946 of the amplifier circuit 900. The fourth switch 936 includes acontrol terminal 942 to allow the fourth switch 936 to alternately openand close.

The bypassable circuit 900 further includes a controller 902. Thecontroller 902 includes an input terminal 924 into which a RF powerdesignating signal, S_(RFOUT), indicating the existence of a high RFoutput power condition or a low RF output power condition, is input. Thecontroller 902 includes a first output terminal 912 and a second outputterminal 914. The first output terminal 912 of the controller 902 isconnected to the control terminal 922 of the first switch 904 and thecontrol terminal 942 of the fourth switch 936, and the second outputterminal 914 of the controller 902 is connected to the control terminal928 of the second switch 906. The controller 902 further includes athird output terminal 916 connected to the control terminal 934 of thethird switch 908.

The following is a description of the operation of the bypassablecircuit 900. The handset or WLL terminal receives the RF powerdesignating signal, S_(RFOUT), through an input terminal 944 of thecontroller 902. During a high RF output power condition designated bythe RF power designating signal, S_(RFOUT), the controller 902 producesa high select signal, S_(SEL1), on the first output terminal 912 of thecontroller 902, and a low select signal, S_(SEL2), on the second outputterminal 914 of the controller 502. The high select signal, S_(SEL1), isapplied to the control terminal 922 of the first switch 904 and thecontrol terminal 942 of the fourth switch 936, thereby closing the firstswitch 904 and the fourth switch 936. The low select signal, S_(SEL2),is applied to the control terminal 928 of the second switch 906, therebyopening the second switch 906. The controller 902 also produces a highswitch signal, S_(SW), on the third output terminal 916 of thecontroller 902. The high switch signal, S_(SW), is applied to thecontrol terminal 934 of the third switch 908, thereby closing the thirdswitch 908 and providing the flow of power from the power supply 54 tothe RF amplifier 102.

The driver 101 amplifies the RF input signal, RF_(in), and produces anRF signal, RF_(in)′, on the RF output terminal 130 of the driver 101.The RF signal, RF_(in)′, passes through the closed first switch 904 andapplied to the RF input terminal 120 of the RF amplifier 102. The RFsignal, RF_(in)′, however, does not pass through the open second switch906. The RF amplifier 102 amplifies the RF signal, RF_(in)′, andproduces an RF output signal, RF_(out), on the RF output terminal 122 ofthe RF amplifier 102 that has been effectively amplified by the driver101 and the RF amplifier 102. The RF output signal, RF_(out), passesthrough the closed fourth switch 936 to the RF output terminal 946 ofthe amplifier circuit 900.

During a low RF output power condition designated by the RF powerdesignating signal, S_(RFOUT), the controller 902 produces a high selectsignal, S_(SEL2), on the second output terminal 914 of the controller902, and a low select signal, S_(SEL1), on the first output terminal 912of the controller 902. The high select signal, S_(SEL2), is applied tothe control terminal 928 of the second switch 906, thereby closing thesecond switch 906. The low select signal, S_(SEL1), is applied to thecontrol terminal 922 of the first switch 904 and the control terminal942 of the fourth switch 936, thereby opening the first switch 904 andthe fourth switch 936. The controller 902 also produces a low switchsignal, S_(SW), on the third output terminal 916 of the controller 902.The low switch signal, S_(SW), is applied to the control terminal 934 ofthe fourth switch 908, opening the fourth switch 908 and impeding theflow of power from the power supply 54 to the RF amplifier 102.

The driver 101 amplifies the RF input signal, RF_(in), and produces anRF signal, RF_(in)′, on the RF output terminal 130 of the driver 101.The RF signal, RF_(in)′, does not pass through the open first switch 904to the RF amplifier 102, but rather passes through closed second switch906. The RF signal, RF_(in)′, is applied to the RF output terminal 946of the amplifier circuit 900 as the RF output signal, RF_(out), whichhas effectively been solely amplified by the driver 101. The open fourthswitch 936 prevents the RF signal, RF_(out), from entering the RFamplifier 102 through the RF output terminal 122 of the RF amplifier102.

Alternatively, the controller 902 and the respective switches 904, 906,908, and 936 can be configured so that the respective switches 904, 906,and 908 are closed by low select signals, S_(SEL1) and S_(SEL2), ratherthan high select signals, S_(SEL1) and S_(SEL2), and the switch 936 isclosed by a low switch signal, S_(SW), rather than a high switch signal,S_(SW).

More alternatively, the controller 902 and the respective switches 904,906, 908 are closed or opened by a single select signal, S_(SEL1),produced on a single control terminal of the controller 902. In thiscase, a component such as an inverter can be placed between the singlecontrol terminal of the controller 902 and the control terminals of thefirst switch 904 and second switch 906 or the control terminal of thethird switch 908.

The RF amplifier 102 is only operated when a high power RF outputsignal, RF_(out), is required, conserving energy expended by thebypassable circuit 900 when a low power RF output signal, RF_(in), isrequired.

Like the bypassable circuits 500 and 550, the bypassable circuit 900 canbe employed to make the amplifier circuits 100, 200, 300, or 400respectively depicted in FIGS. 6, 11, 15, and 18 more power efficient.

Thus, an improved apparatus and method for improving the powerefficiency and linearity of an RF amplifier is disclosed. The variouscomponents of the embodiments have been described as being connected toeach other. Intermediate components, however, can be placed betweenthose components described as being connected to each other to formatthe signal between the respective components without straying from theprinciples taught by this invention. While embodiments and applicationsof this invention have been shown and described, it would be apparent tothose skilled in the art that many more modifications are possiblewithout departing from the inventive concepts herein.

The invention, therefore is not to be restricted except in the spirit ofthe appended claims.

What is claimed:
 1. A method of regulating the DC power consumption in awireless communications mobile unit, the method comprising: providing DCpower within said mobile unit; transmitting a command signal from a basestation, said command signal indicating a desired power level of an RFsignal output from said mobile unit; receiving said command signal atsaid mobile unit; and setting a level of said DC power based on saidcommand signal; wherein said DC power produces a supply current in an RFamplifier circuit within said mobile unit, and wherein said DC powerlevel is set by: generating a control signal within said mobile unit,wherein a level of said control signal is selected based on said commandsignal; generating a supply current tracking signal indicating thepresent level of said supply current; determining the difference betweenat least said control signal and at least said supply current trackingsignal to obtain a biasing signal; and varying said supply current inproportion to said biasing signal.
 2. The method of claim 1, furthercomprising varying said DC power level from said set DC power level by:applying a modulated RF signal on an input terminal of said RF amplifiercircuit, said modulated RF signal having an envelope; and varying saidset DC power level in proportion to said envelope.
 3. The method ofclaim 2, wherein said DC power level is varied from said set DC powerlevel by: sensing said RF output signal to produce a sampled envelopesignal; and adding said sampled envelope signal to said control signal.4. The method of claim 1, wherein said mobile unit comprises an RFamplifier circuit, and wherein said DC power level substantially equalsthe minimum value required to maintain linear operation of said RFamplifier circuit.
 5. The method of claim 1, wherein said mobile unitcomprises an RF amplifier circuit, and wherein said DC power level isset by: generating a control signal within said mobile unit, wherein alevel of said control signal is selected based on said command signal;and applying said control signal to said RF amplifier circuit.
 6. Themethod of claim 5, wherein said control signal level is selected from aplurality of control signal levels, each of said plurality of controlsignal levels corresponding to a respective plurality of RF power outputlevels.
 7. The method of claim 1, wherein said RF output signal ismodulated, the method further comprising varying said DC power levelfrom said set DC power level in proportion to an envelope of saidmodulated RF output signal.
 8. The method of claim 7, wherein said DCpower level is varied from said set DC power level by: sensing saidmodulated RF output signal to produce a sampled envelope signal; andadding said sampled envelope signal to said control signal.
 9. A methodof regulating the DC power consumption in a wireless communicationsmobile unit, the method comprising: providing DC power within saidmobile unit; transmitting a command signal from a base station, saidcommand signal indicating a desired power level of an RF signal outputfrom said mobile unit; receiving said command signal at said mobileunit; and setting a level of said DC power based on said command signal;wherein said DC power produces a supply voltage across an RF amplifiercircuit within said mobile unit, and wherein said DC power level is setby: generating a control signal within said mobile unit, wherein a levelof said control signal is selected based on said command signal;generating a supply current tracking signal indicating the present levelof said supply voltage; determining the difference between at least saidcontrol signal and at least said supply voltage tracking signal toobtain a biasing signal; and varying said supply voltage in proportionto said biasing signal.
 10. The method of claim 9, further comprisingvarying said DC power level from said set DC power level by: applying amodulated RF signal on an input terminal of said RF amplifier circuit,said modulated RF signal having an envelope; and varying said set DCpower level in proportion to said envelope.
 11. The method of claim 10,wherein said DC power level is varied from said set DC power level by:sensing said RF output signal to produce a sampled envelope signal; andadding said sampled envelope signal to said control signal.
 12. A methodof regulating the DC power consumption in a wireless communicationsmobile unit, the method comprising: providing DC power within saidmobile unit; transmitting a command signal from a base station, saidcommand signal indicating a desired power level of an RF signal outputfrom said mobile unit; receiving said command signal at said mobileunit; and setting a level of said DC power based on said command signal;wherein said mobile unit comprises a driver and an RF amplifier circuit,and wherein said command signal indicates one of a high RF output powercondition and a low RF output power condition, and wherein said DC powerlevel is set by: amplifying an RF signal through said driver; providingsaid DC power to said RF amplifier circuit and amplifying said RF signalthrough said RF amplifier circuit in response to said high RF amplifiercircuit; and bypassing further amplification of said RF signal thoughsaid RF amplifier circuit in response to said low RF output powercondition.
 13. The method of claim 12, wherein said mobile unit is amobile handset.
 14. The method of claim 12, wherein said command signalis an RF power output designating signal.
 15. A mobile unit for awireless communications system, comprising: an RF amplifier circuit;means for supplying DC power to said RF amplifier circuit; means forreceiving a command signal transmitted to said mobile unit, said commandsignal indicating a desired power level of an RF signal output from saidRF amplifier circuit, and means for setting a level of said DC powerbased on said command signal; wherein said DC power supply meansproduces a supply current in said RF amplifier circuit, and said DCpower level setting means comprises: means for generating a controlvoltage within said mobile unit; mans for generating a supply currenttracking voltage; means for determining the difference between at leastsaid control voltage and at least said supply current tracking voltageto obtain a biasing signal; and means for varying said supply currentwith said biasing signal.
 16. The mobile unit of claim 15, furthercomprising means for varying said set DC power level in proportion tothe envelope of an RF modulated input signal.
 17. The mobile unit ofclaim 15, wherein said DC power level substantially equals the minimumvalue required to maintain linear operation of said RF amplifiercircuit.
 18. A mobile unit for a wireless communications system,comprising: an RF amplifier circuit; means for supplying DC power tosaid RF amplifier circuit; means for receiving a command signaltransmitted to said mobile unit, said command signal indicating adesired power level of an RF signal output from said RF amplifiercircuit, and means for setting a level of said DC power based on saidcommand signal; wherein said DC power supply means produces a supplyvoltage across said RF amplifier circuit, said DC power supply meanscomprising an internal source voltage, and wherein said DC power levelsetting means comprises: means for generating a control voltage withinsaid mobile unit; means for generating a supply voltage trackingvoltage; means for determining the difference between at least saidcontrol voltage and at least said supply voltage tracking voltage toobtain a biasing signal; and means for varying said internal sourcevoltage with said biasing signal.
 19. The mobile unit of claim 18,further comprising means for varying said set DC power level inproportion to the envelope of an RF modulated input signal.
 20. A mobileunit for a wireless communications system, comprising: an RF amplifiercircuit; means for supplying DC power to said RF amplifier circuit;means for receiving a command signal transmitted to said mobile unit,said command signal indicating a desired power level of an RF signaloutput from said RF amplifier circuit, and means for setting a level ofsaid DC power based on said command signal; wherein said command signalindicates one of a high RF output power condition and a low RF outputpower condition, and wherein said DC power level setting meanscomprises: pre-amplification means; means for supplying said DC power tosaid RF amplifier circuit during said high RF output power condition andimpeding said DC power to said RF amplifier circuit during said low RFoutput power condition; and means for electrically coupling the outputof said pre-amplification means to the input of said RF amplifiercircuit during said high RF output power condition and electricallycoupling the output of said pre-amplification means to the output ofsaid RF amplifier circuit during said low RF output condition.
 21. Themobile unit of claim 20, wherein said command signal is an RF poweroutput designating signal.